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NCP1339FDR2G

更新时间： 2024-12-01 00:54:59
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管
页数 文件大小 规格书
32页 364K
描述
High-Voltage, QuasiResonant Controller featuring Valley Lock-Out and Power Saving Mode

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中文翻译

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NCP1339FDR2G 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：End Of Life包装说明：SOP,
Reach Compliance Code：compliantFactory Lead Time：4 weeks
风险等级：4.66其他特性：CONFIGURED AS FLYBACK TOPOLOGY
模拟集成电路 - 其他类型：SWITCHING CONTROLLER控制模式：CURRENT-MODE
控制技术：RESONANT CONTROL最大输入电压：28 V
最小输入电压：10 V标称输入电压：12 V
JESD-30 代码：R-PDSO-G13JESD-609代码：e3
长度：8.65 mm湿度敏感等级：1
功能数量：1端子数量：13
最高工作温度：125 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED座面最大高度：1.75 mm
表面贴装：YES最大切换频率：25 kHz
温度等级：AUTOMOTIVE端子面层：Tin (Sn)
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：3.9 mmBase Number Matches：1

NCP1339FDR2G 数据手册

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NCP1339  
High-Voltage, Quasi-  
Resonant Controller  
featuring Valley Lock-Out  
and Power Saving Mode  
www.onsemi.com  
The NCP1339 is a highly integrated quasi−resonant flyback  
controller capable of controlling rugged and high−performance  
off−line power supplies as required by adapter applications. With an  
integrated active X−cap discharge feature and power savings mode,  
the NCP1339 can enable no−load power consumption below 10 mW  
for 45 W notebook adapters.  
14  
1
SOIC−14 NB  
(LESS PIN 13)  
D SUFFIX  
The quasi−resonant current−mode flyback stage features a  
proprietary valley−lockout circuitry, ensuring stable valley switching.  
CASE 751AN  
th  
This system works down to the 6 valley and toggles to a frequency  
foldback mode to eliminate switching losses. When the loop tends to  
force below 25−kHz frequencies, the NCP1339 skips cycles to contain  
the power delivery.  
MARKING DIAGRAM  
14  
To help build rugged converters, the controller features several key  
protective features: an internal brown−out, a non−dissipative Over Power  
Protection for a constant maximum output current regardless of the  
input voltage, a latched over−voltage protection through a dedicated pin.  
NCP1339xG  
AWLYWW  
1
NCP1339 = Specific Device Code  
Features  
x
A
WL  
Y
= C, D, E, F, G, H, I or J  
= Assembly Location  
= Wafer Lot  
• High−voltage Current Source for Lossless Start−up Sequence  
• X2 Capacitors Discharge Capability  
= Year  
• Power Savings Mode (PSM) for Extremely Low No−Load Power:  
WW  
G
= Work Week  
= Pb−Free Package  
• Wide V Range from 10 V to 28 V  
CC  
• Latching−off 28−V V Over−Voltage Protection  
CC  
• Abnormal Overcurrent Fault Protection for Winding Short Circuit or  
Inductor Saturation Detection  
PIN CONNECTIONS  
• Integrated High−Voltage Startup Circuit with Brown−Out Detection  
• Fault Input for Severe Fault Conditions, NTC Compatible for OTP  
X2  
HV  
REM  
OPP  
ZCD  
Fault  
FB  
NC  
NC  
VCC  
DRV  
• Circuit Latching Off In Severe Fault Detection (OVP or OTP)  
• Internal Temperature Shutdown  
• Valley Switching Operation with Valley−Lockout for Noise−Free  
Operation  
CS  
GND  
• Frequency Fold−back for Highest Performance in Standby Mode  
• 25−kHz Clamp and Skip Mode  
(For C, D, E, F, G, and H versions)  
X2  
REM  
OPP  
ZCD  
Fault  
FB  
HV  
• Timer−Based Overload Protection (Latched or Auto−Recovery  
Options)  
NC  
IFF  
VCC  
DRV  
• Adjustable Overpower Protection  
• 4−ms Soft−Start Timer  
• ZCD Blanking Time to Ignore Leakage Ringing at Turn−Off:  
3 ms for C, D and E versions and 0.7 ms for F, G, H, I and J versions  
• Ready for High−Density QR design (F, G, H, I and J versions)  
• These Devices are Pb−Free and are RoHS Compliant  
CS  
GND  
(For I and J versions)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 31 of this data sheet.  
This document contains information on some products that are still under development.  
ON Semiconductor reserves the right to change or discontinue these products without  
notice.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
April, 2016 − Rev. 5  
NCP1339/D  
1234567...32

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