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NCP1339GDR2G PDF预览

NCP1339GDR2G

更新时间: 2024-11-09 00:54:59
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
32页 364K
描述
High-Voltage, QuasiResonant Controller featuring Valley Lock-Out and Power Saving Mode

NCP1339GDR2G 数据手册

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NCP1339  
High-Voltage, Quasi-  
Resonant Controller  
featuring Valley Lock-Out  
and Power Saving Mode  
www.onsemi.com  
The NCP1339 is a highly integrated quasi−resonant flyback  
controller capable of controlling rugged and high−performance  
off−line power supplies as required by adapter applications. With an  
integrated active X−cap discharge feature and power savings mode,  
the NCP1339 can enable no−load power consumption below 10 mW  
for 45 W notebook adapters.  
14  
1
SOIC−14 NB  
(LESS PIN 13)  
D SUFFIX  
The quasi−resonant current−mode flyback stage features a  
proprietary valley−lockout circuitry, ensuring stable valley switching.  
CASE 751AN  
th  
This system works down to the 6 valley and toggles to a frequency  
foldback mode to eliminate switching losses. When the loop tends to  
force below 25−kHz frequencies, the NCP1339 skips cycles to contain  
the power delivery.  
MARKING DIAGRAM  
14  
To help build rugged converters, the controller features several key  
protective features: an internal brown−out, a non−dissipative Over Power  
Protection for a constant maximum output current regardless of the  
input voltage, a latched over−voltage protection through a dedicated pin.  
NCP1339xG  
AWLYWW  
1
NCP1339 = Specific Device Code  
Features  
x
A
WL  
Y
= C, D, E, F, G, H, I or J  
= Assembly Location  
= Wafer Lot  
High−voltage Current Source for Lossless Start−up Sequence  
X2 Capacitors Discharge Capability  
= Year  
Power Savings Mode (PSM) for Extremely Low No−Load Power:  
WW  
G
= Work Week  
= Pb−Free Package  
Wide V Range from 10 V to 28 V  
CC  
Latching−off 28−V V Over−Voltage Protection  
CC  
Abnormal Overcurrent Fault Protection for Winding Short Circuit or  
Inductor Saturation Detection  
PIN CONNECTIONS  
Integrated High−Voltage Startup Circuit with Brown−Out Detection  
Fault Input for Severe Fault Conditions, NTC Compatible for OTP  
X2  
HV  
REM  
OPP  
ZCD  
Fault  
FB  
NC  
NC  
VCC  
DRV  
Circuit Latching Off In Severe Fault Detection (OVP or OTP)  
Internal Temperature Shutdown  
Valley Switching Operation with Valley−Lockout for Noise−Free  
Operation  
CS  
GND  
Frequency Fold−back for Highest Performance in Standby Mode  
25−kHz Clamp and Skip Mode  
(For C, D, E, F, G, and H versions)  
X2  
REM  
OPP  
ZCD  
Fault  
FB  
HV  
Timer−Based Overload Protection (Latched or Auto−Recovery  
Options)  
NC  
IFF  
VCC  
DRV  
Adjustable Overpower Protection  
4−ms Soft−Start Timer  
ZCD Blanking Time to Ignore Leakage Ringing at Turn−Off:  
3 ms for C, D and E versions and 0.7 ms for F, G, H, I and J versions  
Ready for High−Density QR design (F, G, H, I and J versions)  
These Devices are Pb−Free and are RoHS Compliant  
CS  
GND  
(For I and J versions)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 31 of this data sheet.  
This document contains information on some products that are still under development.  
ON Semiconductor reserves the right to change or discontinue these products without  
notice.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
April, 2016 − Rev. 5  
NCP1339/D  

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