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NCE3015S
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
1
-
1.4
5.1
7.3
-
2.4
7.0
9.5
-
V
mΩ
S
VGS=10V, ID=10A
Drain-Source On-State Resistance
VGS=4.5V, ID=10A
-
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
VDS=5V,ID=10A
20
Clss
Coss
Crss
-
-
-
1400
205
-
-
-
PF
PF
PF
VDS=15V,VGS=0V,
Output Capacitance
F=1.0MHz
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
177
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
9
8
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
VDD=5V,ID=10A
VGS=10V,RGEN=6Ω
Turn-Off Delay Time
28
5
Turn-Off Fall Time
Total Gate Charge
Qg
Qgs
Qgd
32.3
4.9
6.9
VDS=15V,ID=10A,
Gate-Source Charge
VGS=10V
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
VSD
IS
VGS=0V,IS=10A
-
-
-
-
0.85
1.2
15
27
20
V
A
-
-
-
trr
TJ = 25°C, IF = 10A
di/dt = 100A/μs(Note3)
nS
nC
Reverse Recovery Charge
Forward Turn-On Time
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition:Tj=25℃,VDD=15V,VG=10V,L=0.5mH,Rg=25Ω
Wuxi NCE Power Co., Ltd
Page 2
V2.0