NCE3080IA
http://www.ncepower.com
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE3080IA uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS =30V,ID =80A
RDS(ON) <6.5mΩ @ VGS=10V
Schematic diagram
RDS(ON) < 10mΩ @ VGS=5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
Marking and pin assignment
Application
●
●
●
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
100% UIS TESTED!
TO-251 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCE3080IA
NCE3080IA
TO-251
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
30
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
VDS
±20
VGS
80
50
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
ID (100℃)
IDM
A
170
A
Maximum Power Dissipation
83
W
PD
Derating factor
Single pulse avalanche energy (Note 5)
0.56
W/℃
mJ
℃
EAS
306
Operating Junction and Storage Temperature Range
-55 To 175
TJ,TSTG
Wuxi NCE Power Co., Ltd
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