Datasheet > NCD57000

NCD57000

更新时间： 2024-12-01 02:52:47

品牌	Logo	应用领域
安森美 - ONSEMI		栅双极性晶体管
页数	文件大小	规格书
14页	230K
描述
Isolated High Current IGBT Gate Driver

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NCD57000 数据手册

NCD57000

Isolated High Current IGBT

Gate Driver

NCD57000 is a high−current single channel IGBT driver with

internal galvanic isolation, designed for high system efficiency and

reliability in high power applications. Its features include

complementary inputs, open drain FAULT and Ready outputs, active

Miller clamp, accurate UVLOs, DESAT protection, soft turn−off at

DESAT, and separate high and low (OUTH and OUTL) driver outputs

for system design convenience. NCD57000 accommodates both 5 V

and 3.3 V signals on the input side and wide bias voltage range on the

driver side including negative voltage capability. NCD57000 provides

www.onsemi.com

> 5 kVrms (UL1577 rating) galvanic isolation and > 1200 V

iorm

SOIC−16 WB

CASE 751G−03

(working voltage) capabilities. NCD57000 is available in the

wide−body SOIC−16 package with guaranteed 8 mm creepage

distance between input and output to fulfill reinforced safety

insulation requirements.

MARKING DIAGRAM

Features

• High Current Output (+4/−6 A) at IGBT Miller Plateau Voltages

• Low Output Impedance for Enhanced IGBT Driving

• Short Propagation Delays with Accurate Matching

• Active Miller Clamp to Prevent Spurious Gate Turn−on

• DESAT Protection with Programmable Delay

• Negative Voltage (Down to −9 V) Capability for DESAT

• Soft Turn Off During IGBT Short Circuit

XXXXXXXXXXX

AWLYYWWG

XXXXX = Specific Device Code

= Assembly Location

= Wafer Lot

= Year

= Work Week

= Pb−Free Package

• IGBT Gate Clamping During Short Circuit

• IGBT Gate Active Pull Down

• Tight UVLO Thresholds for Bias Flexibility

• Wide Bias Voltage Range including Negative VEE2

• 3.3 V to 5 V Input Supply Voltage

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”,

may or may not be present.

• Designed for AEC−Q100 Certification

• 5000 V Galvanic Isolation (to meet UL1577 Requirements)

• 1200 V Working Voltage (per VDE0884−11 Requirements)

• High Transient Immunity

PIN ASSIGNMENT

VEE2A

GND1

VDD1

RST

FLT

DESAT

GND2

OUTH

VDD2

OUTL

CLAMP

VEE2

• High Electromagnetic Immunity

• These Devices are Pb−Free, Halogen Free and are RoHS Compliant

RDY

IN−

Typical Applications

• Solar Inverters

• Motor Control

• Uninterruptible Power Supplies (UPS)

• Industrial Power Supplies

• Welding

IN+

GND1A

ORDERING INFORMATION

See detailed ordering and shipping information on page 7 of

this data sheet.

Publication Order Number:

February, 2019 − Rev. 2

NCD57000/D

12 3 4 5 6 7...14

中文翻译

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与NCD57000相关器件

型号	品牌	获取价格	描述	数据表
NCD57000D	ONSEMI	获取价格	Isolated High Current IGBT Gate Driver
NCD57000DWR2G	ONSEMI	获取价格	Isolated High Current IGBT Gate Driver
NCD57001	ONSEMI	获取价格	Isolated High Current IGBT Gate Driver
NCD57001D	ONSEMI	获取价格	Isolated High Current IGBT Gate Driver
NCD57001DWR2G	ONSEMI	获取价格	Isolated High Current IGBT Gate Driver
NCD57001FDWR2G	ONSEMI	获取价格	Isolated High Current IGBT Gate Driver
NCD5700DR2G	ONSEMI	获取价格	High Current IGBT Gate Driver
NCD5701	ONSEMI	获取价格	High Current IGBT Gate Drivers
NCD5701A	ONSEMI	获取价格	High Current IGBT Gate Drivers
NCD5701ADR2G	ONSEMI	获取价格	High Current IGBT Gate Drivers

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