是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | SOIC-8 | Reach Compliance Code: | compliant |
Factory Lead Time: | 5 weeks | 风险等级: | 1.54 |
接口集成电路类型: | BUFFER OR INVERTER BASED IGBT DRIVER | JESD-30 代码: | R-PDSO-G8 |
长度: | 5 mm | 标称负供电电压: | -8 V |
功能数量: | 1 | 端子数量: | 8 |
最高工作温度: | 125 °C | 最低工作温度: | -40 °C |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | SOP |
封装等效代码: | SOP8,.24 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
座面最大高度: | 1.75 mm | 最大供电电压: | 30 V |
最小供电电压: | 13.2 V | 标称供电电压: | 15 V |
表面贴装: | YES | 温度等级: | AUTOMOTIVE |
端子形式: | GULL WING | 端子节距: | 1.27 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
断开时间: | 0.075 µs | 接通时间: | 0.075 µs |
宽度: | 4 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NCD5703C | ONSEMI |
获取价格 |
High Current IGBT Gate Drivers | |
NCD5703CDR2G | ONSEMI |
获取价格 |
High Current IGBT Gate Drivers | |
NCD5707BDR2G | ONSEMI |
获取价格 |
IGBT Gate Drivers, High-Current, Stand-Alone, Non-inverting | |
NCD57080A | ONSEMI |
获取价格 |
Isolated High Current IGBT Gate Driver | |
NCD57080ADR2G | ONSEMI |
获取价格 |
Isolated High Current IGBT Gate Driver | |
NCD57080B | ONSEMI |
获取价格 |
Isolated High Current IGBT Gate Driver | |
NCD57080BDR2G | ONSEMI |
获取价格 |
MOSFET Driver | |
NCD57080C | ONSEMI |
获取价格 |
Isolated High Current IGBT Gate Driver | |
NCD57080CDR2G | ONSEMI |
获取价格 |
Isolated High Current IGBT Gate Driver | |
NCD57081ADR2G | ONSEMI |
获取价格 |
Isolated High Current Gate Driver |