Datasheet > NCAA3900BKNGHWS

NCAA3900BKNGHWS

更新时间： 2024-10-28 19:32:43

品牌	Logo	应用领域
威世 - VISHAY		电容器
页数	文件大小	规格书
4页	80K
描述
CAP,SILICON,39PF,10% -TOL,10% +TOL,45PPM TC

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NCAA3900BKNGHWS 技术参数

生命周期：	Active	包装说明：	, 0202
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.66	电容：	0.000039 µF
电容器类型：	CERAMIC CAPACITOR	介电材料：	CERAMIC
高度：	0.25 mm	长度：	0.508 mm
负容差：	10%	端子数量：	2
最高工作温度：	125 °C	最低工作温度：	-55 °C
封装形式：	SMT	包装方法：	Waffle Pack
正容差：	10%	系列：	NC SERIES
尺寸代码：	0202	温度系数：	45ppm/Cel ppm/ °C
宽度：	0.508 mm	Base Number Matches：	1

NCAA3900BKNGHWS 数据手册

NC Series

Vishay Electro-Films

Thin Film Single Value

Chip and Wire Capacitors

FEATURES

• Wire bondable

Product may not

be to scale

• Small size: 0.020 inches square to 0.060 inches square

• Substrate: Silicon with gold backing

• Dielectric: Silicon dioxide/silicon nitride

• Capacitance range: 0.5 pF to 1000 pF

The NC series of thin film capacitors has the advantage of

increased performance and smaller size when compared

with its thick film counterparts. These chips are available in

sizes down to 20 mil square and in capacitances up to

1000 pF.

Parts require epoxy or eutectic die attach to substrate and

one wire bond.

These chips are manufactured using Vishay Electro-Films

(EFI) sophisticated Thin Film equipment and manufacturing

technology. The NC’s are 100 % electrically tested and

visually inspected to MIL-STD-883.

APPLICATIONS

The NC series of capacitor chips are designed for assembly in hybrid circuits using conventional wire-bonding techniques. They

provide excellent stability and performance, and their small size gives the hybrid designer greater layout flexibility. They are

available as MNOS or MOS capacitors. The MOS version is to be preferred when low dielectric absorption is required.

ELECTRICAL SCHEMATIC

NCAA/NCBB/NCCC

ELECTRICAL SCHEMATIC

NCDD/NCEE

TOP BONDING PADS

BACK OF CHIP

TOP BONDING PADS

BACK OF CHIP

STANDARD ELECTRICAL SPECIFICATIONS

PARAMETER

Peak Voltage at + 25 °C

1.5 x working voltage

0.05 % MNOS

0.1 % MOS

Dissipation Factor, 1 kHz, 1 V_RMS, + 25 °C

Q at 1 mHz, 50 mV_RMS, + 25 °C

TCC, - 55 °C to + 150 °C

1000 min.

+ 45 25 ppm/ꢀC MNOS

+ 15 25 ppm/ꢀC MOS

Insulation Resistance at Working Voltage, + 25 °C

Operating Temperature Range

10⁹min.

- 55 ꢀC to + 125 ꢀC

Thermal Shock

0.25 % + 0.25 pF max. ΔC/C

1.0 % + 0.25 pF max. ΔC/C

0.25 % + 0.25 pF max.

0.25 % + 0.25 pF max. ΔC/C

Moisture Resistance, MIL-STD-202, Method 106

Short Time Overload, + 25 °C, 5 s, 1.5 x Working Voltage

High Temperature Exposure, 100 h at 150 °C Ambient

Life, MIL-STD-202, Method 108

Condition D, + 125 °C Ambient, 100 h at Working Voltage

0.25 % + 0.25 pF max. ΔC/C

Document Number: 61033

Revision: 25-Feb-10

For technical questions, contact: efi@vishay.com

www.vishay.com

101

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