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NAND512W4A1AZB6E PDF预览

NAND512W4A1AZB6E

更新时间: 2024-01-17 00:44:20
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 内存集成电路
页数 文件大小 规格书
56页 882K
描述
Flash, 32MX16, 10000ns, PBGA55, 8 X 10 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TFBGA-55

NAND512W4A1AZB6E 技术参数

是否Rohs认证:不符合生命周期:Transferred
零件包装代码:BGA包装说明:8 X 10 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TFBGA-55
针数:55Reach Compliance Code:not_compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.3Is Samacsys:N
最长访问时间:10000 ns命令用户界面:YES
数据轮询:NOJESD-30 代码:R-PBGA-B55
JESD-609代码:e0长度:10 mm
内存密度:536870912 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:4K端子数量:55
字数:33554432 words字数代码:32000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:32MX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装等效代码:BGA55,8X12,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH页面大小:256 words
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3/3.3 V编程电压:3 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:8K
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.02 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:NO类型:NAND TYPE
宽度:8 mmBase Number Matches:1

NAND512W4A1AZB6E 数据手册

 浏览型号NAND512W4A1AZB6E的Datasheet PDF文件第2页浏览型号NAND512W4A1AZB6E的Datasheet PDF文件第3页浏览型号NAND512W4A1AZB6E的Datasheet PDF文件第4页浏览型号NAND512W4A1AZB6E的Datasheet PDF文件第5页浏览型号NAND512W4A1AZB6E的Datasheet PDF文件第6页浏览型号NAND512W4A1AZB6E的Datasheet PDF文件第7页 
NAND128-A, NAND256-A  
NAND512-A, NAND01G-A  
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16)  
528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories  
PRELIMINARY DATA  
FEATURES SUMMARY  
HIGH DENSITY NAND FLASH MEMORIES  
Figure 1. Packages  
Up to 1 Gbit memory array  
Up to 32 Mbit spare area  
Cost effective solutions for mass storage  
applications  
NAND INTERFACE  
x8 or x16 bus width  
Multiplexed Address/ Data  
Pinout compatibility for all densities  
TSOP48 12 x 20mm  
SUPPLY VOLTAGE  
1.8V device: VDD = 1.7 to 1.95V  
3.0V device: VDD = 2.7 to 3.6V  
PAGE SIZE  
x8 device: (512 + 16 spare) Bytes  
x16 device: (256 + 8 spare) Words  
WSOP48 12 x 17 x 0.65mm  
BLOCK SIZE  
x8 device: (16K + 512 spare) Bytes  
x16 device: (8K + 256 spare) Words  
FBGA  
PAGE READ / PROGRAM  
Random access: 12µs (max)  
Sequential access: 50ns (min)  
Page program time: 200µs (typ)  
VFBGA55 8 x 10 x 1mm  
TFBGA55 8 x 10 x 1.2mm  
VFBGA63 8.5 x 15 x 1mm  
TFBGA63 8.5 x 15 x 1.2mm  
COPY BACK PROGRAM MODE  
Fast page copy without external buffering  
FAST BLOCK ERASE  
Block erase time: 2ms (Typ)  
HARDWARE DATA PROTECTION  
Program/Erase locked during Power  
transitions  
DATA INTEGRITY  
100,000 Program/Erase cycles  
10 years Data Retention  
DEVELOPMENT TOOLS  
STATUS REGISTER  
ELECTRONIC SIGNATURE  
CHIP ENABLE ‘DON’T CARE’ OPTION  
Simple interface with microcontroller  
AUTOMATIC PAGE 0 READ AT POWER-UP  
OPTION  
Error Correction Code software and  
hardware models  
Bad Blocks Management and Wear  
Leveling algorithms  
PC Demo board with simulation software  
File System OS Native reference software  
Hardware simulation models  
Boot from NAND support  
Automatic Memory Download  
SERIAL NUMBER OPTION  
July 2004  
1/56  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

与NAND512W4A1AZB6E相关器件

型号 品牌 获取价格 描述 数据表
NAND512W4A1AZB6F STMICROELECTRONICS

获取价格

Flash, 32MX16, 10000ns, PBGA55, 8 X 10 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TFBGA
NAND512W4A1AZB6T STMICROELECTRONICS

获取价格

32MX16 FLASH 3V PROM, 10000ns, PBGA55, 8 X 10 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TFBGA-55
NAND512W4A1BZA1E STMICROELECTRONICS

获取价格

Flash, 32MX16, 12000ns, PBGA63, 8.50 X 15 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63
NAND512W4A1BZA6 STMICROELECTRONICS

获取价格

Flash, 32MX16, 12000ns, PBGA63, 8.50 X 15 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63
NAND512W4A1BZA6E STMICROELECTRONICS

获取价格

Flash, 32MX16, 12000ns, PBGA63, 8.50 X 15 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63
NAND512W4A1BZA6F STMICROELECTRONICS

获取价格

Flash, 32MX16, 12000ns, PBGA63, 8.50 X 15 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63
NAND512W4A1CZA6E STMICROELECTRONICS

获取价格

Flash, 32MX16, 12000ns, PBGA63, 8.50 X 15 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63
NAND512W4A1CZA6F STMICROELECTRONICS

获取价格

32MX16 FLASH 3V PROM, 12000ns, PBGA63, 8.50 X 15 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63
NAND512W4A1CZA6T STMICROELECTRONICS

获取价格

Flash, 32MX16, 12000ns, PBGA63, 8.50 X 15 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63
NAND512W4A1DN1 STMICROELECTRONICS

获取价格

Flash, 32MX16, 12000ns, PDSO48, 12 X 20 MM, TSOP-48