Datasheet > NAND512W4A1DN1

NAND512W4A1DN1

更新时间： 2024-01-04 23:16:38

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		光电二极管内存集成电路
页数	文件大小	规格书
5页	142K
描述
Flash, 32MX16, 12000ns, PDSO48, 12 X 20 MM, TSOP-48

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数据手册

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NAND512W4A1DN1 数据手册

NAND FLASH

528 Byte, 264 Word Page Family

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16)

1.8V, 3V Supply Flash Memories

DATA BRIEFING

FEATURES SUMMARY

■ HIGH DENSITY NAND FLASH MEMORIES

– Up to 1 Gbit memory array

Figure 1. Packages

– Up to 32Mbit spare area

– Cost effective solutions for mass storage ap-

plications

■ NAND INTERFACE

– x8 or x16 bus width

TSOP48

– Multiplexed Address/ Data

– Pinout compatibility for all densities

■ SUPPLY VOLTAGE

12 x 20 mm

FBGA

– 1.8V device: V = 1.65 to 1.95V

– 3.0V device: V = 2.7 to 3.6V

■ PAGE SIZE

VFBGA63 8.5x15x1 mm

TFBGA63 8.5x15x1.2 mm

VFBGA63 9x11x1 mm

– x8 device: (512 + 16 spare) Bytes

– x16 device: (256 + 8 spare) Words

■ BLOCK SIZE

– x8 device: (16K + 512 spare) Bytes

– x16 device: (8K + 256 spare) Words

■ PAGE READ / PROGRAM

– Random access: 12µs (max)

– Sequential access: 50ns (min)

– Page program time: 200µs (typ)

■ COPY BACK PROGRAM MODE

– Fast page copy without external buffering

■ CACHE PROGRAM MODE

■ AUTOMATIC PAGE 0 READ AT POWER-UP

OPTION

– Boot from NAND support

– Automatic Memory Download

■ SERIAL NUMBER OPTION

■ HARDWARE DATA PROTECTION

– Program/Erase locked during Power transi-

tions

■ DATA INTEGRITY

– 100,000 Program/Erase cycles

– 10 years Data Retention

■ DEVELOPMENT TOOLS

– Internal Cache Register to improve the pro-

gram throughput

■ FAST BLOCK ERASE

– Error Correction Code software and hard-

ware models

– Block erase time: 2ms (Typ)

■ STATUS REGISTER

– Bad Blocks Management and Wear Leveling

algorithms

■ ELECTRONIC SIGNATURE

■ CHIP ENABLE ‘DON’T CARE’ OPTION

– Simple interface with microcontroller

– PC Demo board with simulation software

– File System OS Native reference software

– Hardware simulation models

August 2003

1/5

For further information please contact the STMicroelectronics distributor nearest to you.

12 3 4 5

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与NAND512W4A1DN1相关器件

型号	品牌	获取价格	描述	数据表
NAND512W4A1DN1E	STMICROELECTRONICS	获取价格	Flash, 32MX16, 12000ns, PDSO48, 12 X 20 MM, TSOP-48
NAND512W4A1DN1T	STMICROELECTRONICS	获取价格	32MX16 FLASH 3V PROM, 12000ns, PDSO48, 12 X 20 MM, TSOP-48
NAND512W4A1DZA1	STMICROELECTRONICS	获取价格	Flash, 32MX16, 12000ns, PBGA63, 8.50 X 15 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63
NAND512W4A1DZA1E	STMICROELECTRONICS	获取价格	Flash, 32MX16, 12000ns, PBGA63, 8.50 X 15 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63
NAND512W4A1DZA1T	STMICROELECTRONICS	获取价格	32MX16 FLASH 3V PROM, 12000ns, PBGA63, 8.50 X 15 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63
NAND512W4A1DZA6F	STMICROELECTRONICS	获取价格	32MX16 FLASH 3V PROM, 12000ns, PBGA63, 8.50 X 15 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63
NAND512W4A2AN1	STMICROELECTRONICS	获取价格	128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND512W4A2AN1E	STMICROELECTRONICS	获取价格	128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND512W4A2AN1F	STMICROELECTRONICS	获取价格	128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND512W4A2AN1T	STMICROELECTRONICS	获取价格	128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash

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