Datasheet > NAND512W3A0BN1F

NAND512W3A0BN1F

更新时间： 2024-11-02 05:26:47

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存内存集成电路光电二极管
页数	文件大小	规格书
57页	916K
描述
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NAND512W3A0BN1F 数据手册

NAND128-A, NAND256-A

NAND512-A, NAND01G-A

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16)

528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

FEATURES SUMMARY

■

HIGH DENSITY NAND FLASH MEMORIES

Figure 1. Packages

–

Up to 1 Gbit memory array

Up to 32 Mbit spare area

Cost effective solutions for mass storage

applications

■

NAND INTERFACE

TSOP48 12 x 20mm

–

x8 or x16 bus width

Multiplexed Address/ Data

Pinout compatibility for all densities

■

SUPPLY VOLTAGE

–

1.8V device: V_DD= 1.7 to 1.95V

3.0V device: V_DD= 2.7 to 3.6V

USOP48 12 x 17 x 0.65mm

PAGE SIZE

–

x8 device: (512 + 16 spare) Bytes

x16 device: (256 + 8 spare) Words

FBGA

BLOCK SIZE

–

x8 device: (16K + 512 spare) Bytes

x16 device: (8K + 256 spare) Words

VFBGA55 8 x 10 x 1mm

TFBGA55 8 x 10 x 1.2mm

VFBGA63 9 x 11 x 1mm

TFBGA63 9 x 11 x 1.2mm

PAGE READ / PROGRAM

–

Random access: 12µs (max)

Sequential access: 50ns (min)

Page program time: 200µs (typ)

■

DATA INTEGRITY

■

COPY BACK PROGRAM MODE

Fast page copy without external buffering

FAST BLOCK ERASE

Block erase time: 2ms (Typ)

–

100,000 Program/Erase cycles

10 years Data Retention

–

■

RoHS COMPLIANCE

–

Lead-Free Components are Compliant

with the RoHS Directive

■

STATUS REGISTER

ELECTRONIC SIGNATURE

CHIP ENABLE ‘DON’T CARE’ OPTION

DEVELOPMENT TOOLS

–

Error Correction Code software and

hardware models

–

Simple interface with microcontroller

–

Bad Blocks Management and Wear

Leveling algorithms

■

SERIAL NUMBER OPTION

HARDWARE DATA PROTECTION

–

File System OS Native reference software

Hardware simulation models

–

Program/Erase locked during Power

transitions

February 2005

1/57

12 3 4 5 6 7...57

中文翻译

下载PDF

与NAND512W3A0BN1F相关器件

型号	品牌	获取价格	描述	数据表
NAND512W3A0BN1T	STMICROELECTRONICS	获取价格	128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND512W3A0BN6	STMICROELECTRONICS	获取价格	128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND512W3A0BN6E	STMICROELECTRONICS	获取价格	128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND512W3A0BN6F	STMICROELECTRONICS	获取价格	128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND512W3A0BN6T	STMICROELECTRONICS	获取价格	128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND512W3A0BV1	STMICROELECTRONICS	获取价格	128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND512W3A0BV1E	STMICROELECTRONICS	获取价格	128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND512W3A0BV1F	STMICROELECTRONICS	获取价格	128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND512W3A0BV1T	STMICROELECTRONICS	获取价格	128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND512W3A0BV6	STMICROELECTRONICS	获取价格	128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash

与NAND512W3A0BN1F相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

6
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

3
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

23
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

24

产品中心

服务支持

精选活动

关于我们

帮助中心

NAND512W3A0BN1F

NAND512W3A0BN1F 数据手册

与NAND512W3A0BN1F相关器件

与NAND512W3A0BN1F相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NAND512W3A0BN1F

NAND512W3A0BN1F 数据手册

与NAND512W3A0BN1F相关器件

与NAND512W3A0BN1F相关文章

您还可以找

您在本页遇到什么问题？