Datasheet > NAND128W3A1CZA1

NAND128W3A1CZA1

更新时间： 2024-11-29 13:48:35

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		内存集成电路
页数	文件大小	规格书
5页	142K
描述
Flash, 16MX8, 12000ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NAND128W3A1CZA1 数据手册

NAND FLASH

528 Byte, 264 Word Page Family

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16)

1.8V, 3V Supply Flash Memories

DATA BRIEFING

FEATURES SUMMARY

■ HIGH DENSITY NAND FLASH MEMORIES

– Up to 1 Gbit memory array

Figure 1. Packages

– Up to 32Mbit spare area

– Cost effective solutions for mass storage ap-

plications

■ NAND INTERFACE

– x8 or x16 bus width

TSOP48

– Multiplexed Address/ Data

– Pinout compatibility for all densities

■ SUPPLY VOLTAGE

12 x 20 mm

FBGA

– 1.8V device: V = 1.65 to 1.95V

– 3.0V device: V = 2.7 to 3.6V

■ PAGE SIZE

VFBGA63 8.5x15x1 mm

TFBGA63 8.5x15x1.2 mm

VFBGA63 9x11x1 mm

– x8 device: (512 + 16 spare) Bytes

– x16 device: (256 + 8 spare) Words

■ BLOCK SIZE

– x8 device: (16K + 512 spare) Bytes

– x16 device: (8K + 256 spare) Words

■ PAGE READ / PROGRAM

– Random access: 12µs (max)

– Sequential access: 50ns (min)

– Page program time: 200µs (typ)

■ COPY BACK PROGRAM MODE

– Fast page copy without external buffering

■ CACHE PROGRAM MODE

■ AUTOMATIC PAGE 0 READ AT POWER-UP

OPTION

– Boot from NAND support

– Automatic Memory Download

■ SERIAL NUMBER OPTION

■ HARDWARE DATA PROTECTION

– Program/Erase locked during Power transi-

tions

■ DATA INTEGRITY

– 100,000 Program/Erase cycles

– 10 years Data Retention

■ DEVELOPMENT TOOLS

– Internal Cache Register to improve the pro-

gram throughput

■ FAST BLOCK ERASE

– Error Correction Code software and hard-

ware models

– Block erase time: 2ms (Typ)

■ STATUS REGISTER

– Bad Blocks Management and Wear Leveling

algorithms

■ ELECTRONIC SIGNATURE

■ CHIP ENABLE ‘DON’T CARE’ OPTION

– Simple interface with microcontroller

– PC Demo board with simulation software

– File System OS Native reference software

– Hardware simulation models

August 2003

1/5

For further information please contact the STMicroelectronics distributor nearest to you.

12 3 4 5

中文翻译

下载PDF

与NAND128W3A1CZA1相关器件

型号	品牌	获取价格	描述	数据表
NAND128W3A1DN6E	STMICROELECTRONICS	获取价格	Flash, 16MX8, 12000ns, PDSO48, 12 X 20 MM, TSOP-48
NAND128W3A1DN6T	STMICROELECTRONICS	获取价格	16MX8 FLASH 3V PROM, 12000ns, PDSO48, 12 X 20 MM, TSOP-48
NAND128W3A2AN1	STMICROELECTRONICS	获取价格	128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND128W3A2AN1E	STMICROELECTRONICS	获取价格	128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND128W3A2AN1F	STMICROELECTRONICS	获取价格	128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND128W3A2AN1T	STMICROELECTRONICS	获取价格	128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND128W3A2AN6	STMICROELECTRONICS	获取价格	128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND128W3A2AN6E	STMICROELECTRONICS	获取价格	128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND128W3A2AN6F	STMICROELECTRONICS	获取价格	128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND128W3A2AN6T	STMICROELECTRONICS	获取价格	128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash

与NAND128W3A1CZA1相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

49
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

38
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

67
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

63

产品中心

服务支持

精选活动

关于我们

帮助中心

NAND128W3A1CZA1

NAND128W3A1CZA1 数据手册

与NAND128W3A1CZA1相关器件

与NAND128W3A1CZA1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NAND128W3A1CZA1

NAND128W3A1CZA1 数据手册

与NAND128W3A1CZA1相关器件

与NAND128W3A1CZA1相关文章

您还可以找

您在本页遇到什么问题？