Datasheet > NAND128W3A1AN1T

NAND128W3A1AN1T

更新时间： 2024-11-29 13:48:43

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		光电二极管内存集成电路
页数	文件大小	规格书
56页	882K
描述
Flash, 16MX8, 10000ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48

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中文翻译

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数据手册

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NAND128W3A1AN1T 数据手册

NAND128-A, NAND256-A

NAND512-A, NAND01G-A

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16)

528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

PRELIMINARY DATA

FEATURES SUMMARY

■

HIGH DENSITY NAND FLASH MEMORIES

Figure 1. Packages

–

Up to 1 Gbit memory array

Up to 32 Mbit spare area

Cost effective solutions for mass storage

applications

■

NAND INTERFACE

–

x8 or x16 bus width

Multiplexed Address/ Data

Pinout compatibility for all densities

TSOP48 12 x 20mm

■

SUPPLY VOLTAGE

–

1.8V device: V_DD= 1.7 to 1.95V

3.0V device: V_DD= 2.7 to 3.6V

PAGE SIZE

–

x8 device: (512 + 16 spare) Bytes

x16 device: (256 + 8 spare) Words

WSOP48 12 x 17 x 0.65mm

BLOCK SIZE

–

x8 device: (16K + 512 spare) Bytes

x16 device: (8K + 256 spare) Words

FBGA

PAGE READ / PROGRAM

–

Random access: 12µs (max)

Sequential access: 50ns (min)

Page program time: 200µs (typ)

VFBGA55 8 x 10 x 1mm

TFBGA55 8 x 10 x 1.2mm

VFBGA63 8.5 x 15 x 1mm

TFBGA63 8.5 x 15 x 1.2mm

■

COPY BACK PROGRAM MODE

Fast page copy without external buffering

FAST BLOCK ERASE

Block erase time: 2ms (Typ)

–

■

HARDWARE DATA PROTECTION

–

Program/Erase locked during Power

transitions

DATA INTEGRITY

100,000 Program/Erase cycles

10 years Data Retention

DEVELOPMENT TOOLS

–

■

STATUS REGISTER

ELECTRONIC SIGNATURE

CHIP ENABLE ‘DON’T CARE’ OPTION

–

Simple interface with microcontroller

■

AUTOMATIC PAGE 0 READ AT POWER-UP

OPTION

–

Error Correction Code software and

hardware models

Bad Blocks Management and Wear

Leveling algorithms

PC Demo board with simulation software

File System OS Native reference software

Hardware simulation models

Boot from NAND support

Automatic Memory Download

–

■

SERIAL NUMBER OPTION

–

July 2004

1/56

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

12 3 4 5 6 7...56

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与NAND128W3A1AN1T相关器件

型号	品牌	获取价格	描述	数据表
NAND128W3A1AN6	STMICROELECTRONICS	获取价格	16MX8 FLASH 3V PROM, 10000ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
NAND128W3A1AZA1F	STMICROELECTRONICS	获取价格	16MX8 FLASH 3V PROM, 10000ns, PBGA55, 8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, VF
NAND128W3A1AZA6F	STMICROELECTRONICS	获取价格	Flash, 16MX8, 10000ns, PBGA55, 8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, VFBGA-55
NAND128W3A1BN1	STMICROELECTRONICS	获取价格	16MX8 FLASH 3V PROM, 12000ns, PDSO48, 12 X 20 MM, TSOP-48
NAND128W3A1BZA1F	STMICROELECTRONICS	获取价格	Flash, 16MX8, 12000ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63
NAND128W3A1CN1F	STMICROELECTRONICS	获取价格	Flash, 16MX8, 12000ns, PDSO48, 12 X 20 MM, TSOP-48
NAND128W3A1CZA1	STMICROELECTRONICS	获取价格	Flash, 16MX8, 12000ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63
NAND128W3A1DN6E	STMICROELECTRONICS	获取价格	Flash, 16MX8, 12000ns, PDSO48, 12 X 20 MM, TSOP-48
NAND128W3A1DN6T	STMICROELECTRONICS	获取价格	16MX8 FLASH 3V PROM, 12000ns, PDSO48, 12 X 20 MM, TSOP-48
NAND128W3A2AN1	STMICROELECTRONICS	获取价格	128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash

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