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NAND08GW4B2AZB1T PDF预览

NAND08GW4B2AZB1T

更新时间： 2024-10-27 13:40:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器内存集成电路
页数 文件大小 规格书
59页 1154K
描述
512MX16 FLASH 3V PROM, 25000ns, PBGA63, 9.50 X 12 MM,1.20 MM HEIGHT, 0.80 MM PITCH, TFBGA-63

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NAND08GW4B2AZB1T 技术参数

是否Rohs认证：不符合生命周期：Transferred
零件包装代码：BGA包装说明：9.50 X 12 MM,1.20 MM HEIGHT, 0.80 MM PITCH, TFBGA-63
针数：63Reach Compliance Code：compliant
ECCN代码：3A991.B.1.AHTS代码：8542.32.00.51
风险等级：5.18Is Samacsys：N
最长访问时间：25000 nsJESD-30 代码：R-PBGA-B63
JESD-609代码：e0长度：12 mm
内存密度：8589934592 bit内存集成电路类型：FLASH
内存宽度：16功能数量：1
端子数量：63字数：536870912 words
字数代码：512000000工作模式：ASYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：512MX16封装主体材料：PLASTIC/EPOXY
封装代码：TFBGA封装形状：RECTANGULAR
封装形式：GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行：PARALLEL
峰值回流温度（摄氏度）：NOT SPECIFIED编程电压：3 V
认证状态：Not Qualified座面最大高度：1.2 mm
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子面层：TIN LEAD端子形式：BALL
端子节距：0.8 mm端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED类型：NAND TYPE
宽度：9.5 mmBase Number Matches：1

NAND08GW4B2AZB1T 数据手册

 浏览型号NAND08GW4B2AZB1T的Datasheet PDF文件第2页浏览型号NAND08GW4B2AZB1T的Datasheet PDF文件第3页浏览型号NAND08GW4B2AZB1T的Datasheet PDF文件第4页浏览型号NAND08GW4B2AZB1T的Datasheet PDF文件第5页浏览型号NAND08GW4B2AZB1T的Datasheet PDF文件第6页浏览型号NAND08GW4B2AZB1T的Datasheet PDF文件第7页 
NAND512-B, NAND01G-B NAND02G-B  
NAND04G-B NAND08G-B  
512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit  
2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory  
PRELIMINARY DATA  
FEATURES SUMMARY  
■
HIGH DENSITY NAND FLASH MEMORIES  
Figure 1. Packages  
–
–
–
Up to 8 Gbit memory array  
Up to 64Mbit spare area  
Cost effective solutions for mass storage  
applications  
■
NAND INTERFACE  
–
–
–
x8 or x16 bus width  
Multiplexed Address/ Data  
Pinout compatibility for all densities  
TSOP48 12 x 20mm  
■
■
■
■
SUPPLY VOLTAGE  
–
–
1.8V device: VDD = 1.7 to 1.95V  
3.0V device: VDD = 2.7 to 3.6V  
PAGE SIZE  
USOP48 12 x 17 x 0.65mm  
–
–
x8 device: (2048 + 64 spare) Bytes  
x16 device: (1024 + 32 spare) Words  
BLOCK SIZE  
FBGA  
–
–
x8 device: (128K + 4K spare) Bytes  
x16 device: (64K + 2K spare) Words  
PAGE READ / PROGRAM  
VFBGA63 9.5 x 12 x 1mm  
TFBGA63 9.5 x 12 x 1.2mm  
LFBGA63 9.5 x 12 x 1.4mm  
–
–
–
Random access: 25µs (max)  
Sequential access: 50ns (min)  
Page program time: 300µs (typ)  
■
■
DATA PROTECTION  
■
■
COPY BACK PROGRAM MODE  
Fast page copy without external buffering  
–
–
Hardware and Software Block Locking  
Hardware Program/Erase locked during  
Power transitions  
–
CACHE PROGRAM AND CACHE READ  
MODES  
DATA INTEGRITY  
–
Internal Cache Register to improve the  
program and read throughputs  
–
–
100,000 Program/Erase cycles  
10 years Data Retention  
RoHS COMPLIANCE  
Lead-Free Components are Compliant  
with the RoHS Directive  
DEVELOPMENT TOOLS  
■
FAST BLOCK ERASE  
Block erase time: 2ms (typ)  
■
■
–
–
■
■
■
STATUS REGISTER  
ELECTRONIC SIGNATURE  
CHIP ENABLE ‘DON’T CARE’  
–
Error Correction Code software and  
hardware models  
Bad Blocks Management and Wear  
Leveling algorithms  
PC Demo board with simulation software  
File System OS Native reference software  
Hardware simulation models  
–
for simple interface with microcontroller  
AUTOMATIC PAGE 0 READ AT POWER-UP  
Boot from NAND support  
SERIAL NUMBER OPTION  
■
■
–
–
–
–
–
February 2005  
1/59  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  
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与NAND08GW4B2AZB1T相关器件

型号 品牌 获取价格 描述 数据表
NAND08GW4B2BN1 STMICROELECTRONICS

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 		512MX16 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
NAND08GW4B2BN1E STMICROELECTRONICS

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 		512MX16 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
NAND08GW4B2BN1F STMICROELECTRONICS

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 		512MX16 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
NAND08GW4B2BN6 STMICROELECTRONICS

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 		512MX16 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
NAND08GW4B2BN6E STMICROELECTRONICS

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 		Flash, 512MX16, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
NAND08GW4B2BN6F STMICROELECTRONICS

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 		Flash, 512MX16, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
NAND08GW4B2BN6T STMICROELECTRONICS

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 		Flash, 512MX16, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
NAND08GW4B2BZC6F STMICROELECTRONICS

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 		512MX16 FLASH 3V PROM, 35ns, PBGA63, 9.50 X 12 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, ROHS COM
NAND08GW4B2C NUMONYX

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 		4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash
NAND08GW4B2CN1E NUMONYX

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 		4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash

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