Datasheet > NAND04GR4B2BN6T

NAND04GR4B2BN6T

更新时间： 2024-11-13 09:22:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		光电二极管
页数	文件大小	规格书
57页	887K
描述
Flash, 256MX16, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NAND04GR4B2BN6T 数据手册

NAND01G-B, NAND02G-B,

NAND04G-B, NAND08G-B

1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit

2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

PRELIMINARY DATA

FEATURES SUMMARY

■

HIGH DENSITY NAND FLASH MEMORIES

Figure 1. Packages

–

Up to 8 Gbit memory array

Up to 64Mbit spare area

Cost effective solutions for mass storage

applications

■

NAND INTERFACE

TSOP48 12 x 20mm

–

x8 or x16 bus width

Multiplexed Address/ Data

Pinout compatibility for all densities

FBGA

■

SUPPLY VOLTAGE

–

1.8V device: V = 1.7 to 1.95V

VFBGA63 9.5 x 12 x 1mm

TFBGA63 9.5 x 12 x 1.2mm

3.0V device: V = 2.7 to 3.6V

PAGE SIZE

–

x8 device: (2048 + 64 spare) Bytes

x16 device: (1024 + 32 spare) Words

■

DATA PROTECTION

–

Hardware and Software Block Locking

Hardware Program/Erase locked during

Power transitions

BLOCK SIZE

–

x8 device: (128K + 4K spare) Bytes

x16 device: (64K + 2K spare) Words

DATA INTEGRITY

PAGE READ / PROGRAM

–

100,000 Program/Erase cycles

10 years Data Retention

RoHS COMPLIANCE

Lead-Free Components are Compliant

with the RoHS Directive

DEVELOPMENT TOOLS

–

Random access: 25µs (max)

Sequential access: 50ns (min)

Page program time: 300µs (typ)

■

–

■

COPY BACK PROGRAM MODE

Fast page copy without external buffering

–

CACHE PROGRAM AND CACHE READ

MODES

–

Error Correction Code software and

hardware models

Bad Blocks Management and Wear

Leveling algorithms

PC Demo board with simulation software

File System OS Native reference software

Hardware simulation models

–

Internal Cache Register to improve the

program and read throughputs

–

■

FAST BLOCK ERASE

Block erase time: 2ms (typ)

–

■

STATUS REGISTER

ELECTRONIC SIGNATURE

CHIP ENABLE ‘DON’T CARE’

–

for simple interface with microcontroller

■

SERIAL NUMBER OPTION

October 2005

1/57

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

12 3 4 5 6 7...57

中文翻译

下载PDF

与NAND04GR4B2BN6T相关器件

型号	品牌	获取价格	描述	数据表
NAND04GR4B2CN1E	NUMONYX	获取价格	4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash
NAND04GR4B2CN1E	STMICROELECTRONICS	获取价格	Flash, 256MX16, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
NAND04GR4B2CN1F	NUMONYX	获取价格	4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash
NAND04GR4B2CN1F	STMICROELECTRONICS	获取价格	256MX16 FLASH 1.8V PROM, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
NAND04GR4B2CN6E	NUMONYX	获取价格	4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash
NAND04GR4B2CN6E	STMICROELECTRONICS	获取价格	Flash, 256MX16, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
NAND04GR4B2CN6F	NUMONYX	获取价格	4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash
NAND04GR4B2CN6F	STMICROELECTRONICS	获取价格	256MX16 FLASH 1.8V PROM, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
NAND04GR4B2CN6T	STMICROELECTRONICS	获取价格	Flash, 256MX16, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
NAND04GR4B2CZL1E	NUMONYX	获取价格	4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash

与NAND04GR4B2BN6T相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

8
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

9
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

32

产品中心

服务支持

精选活动

关于我们

帮助中心

NAND04GR4B2BN6T

NAND04GR4B2BN6T 数据手册

与NAND04GR4B2BN6T相关器件

与NAND04GR4B2BN6T相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NAND04GR4B2BN6T

NAND04GR4B2BN6T 数据手册

与NAND04GR4B2BN6T相关器件

与NAND04GR4B2BN6T相关文章

您还可以找

您在本页遇到什么问题？