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NAND01GW3B2BN1

更新时间： 2024-02-02 08:28:58

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存存储内存集成电路光电二极管
页数	文件大小	规格书
64页	633K
描述
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

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NAND01GW3B2BN1 技术参数

NAND01G-B, NAND02G-B

Revision history

Table 30. Document Revision History

Date

Version

Revision Details

25-Feb-2005

First Issue

Automatic Page 0 Read feature removed throughout document.

LFBGA63 package removed throughout document.

Section 11.2: Data Protection and Figure 22: Equivalent Testing

Circuit for AC Characteristics Measurement added.

TFBGA63 and VFBGA63 packages updated. Note added to Figure 3:

TSOP48 Connections, x8 devices and Table 3: TSOP48 Connections, x8

devices regarding the USOP package.

16-Aug-2005

Section 3.8: Write Enable (W), Table 11, Table 12, Table 14,

Section 7.4: Block Lock Status, Figure 18, Table 20, Table 22,

Table 23, Table 25 and Table 30 modified.

512 device and USOP package removed throughout document.

18-Oct-2005

13-Feb-2006

Figure 3, <Blue>Figure 5., Table 22, Table 23 and Section 6.4: Copy

Back Program modified.

4 Gbit and 8 Git devices removed.

4.0

V_IHminimum value and V_ILmaximum value updated in Table 23: DC

Characteristics, 3V Devices.

63/64

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型号	品牌	描述	获取价格	数据表
NAND01GW3B2BN1E	STMICROELECTRONICS	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory	获取价格
NAND01GW3B2BN1E	NUMONYX	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory	获取价格
NAND01GW3B2BN1F	STMICROELECTRONICS	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory	获取价格
NAND01GW3B2BN1F	NUMONYX	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory	获取价格
NAND01GW3B2BN1T	STMICROELECTRONICS	Flash, 128MX8, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48	获取价格
NAND01GW3B2BN6	STMICROELECTRONICS	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory	获取价格