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NAND01GW3B2AN6E PDF预览

NAND01GW3B2AN6E

更新时间: 2024-01-12 17:04:05
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
60页 1272K
描述
128MX8 FLASH 3V PROM, 25000ns, PDSO48, 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48

NAND01GW3B2AN6E 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TSOP包装说明:TSOP1, TSSOP48,.8,20
针数:48Reach Compliance Code:unknown
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.22最长访问时间:25000 ns
命令用户界面:YES数据轮询:NO
JESD-30 代码:R-PDSO-G48JESD-609代码:e3/e6
长度:18.4 mm内存密度:1073741824 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1部门数/规模:1K
端子数量:48字数:134217728 words
字数代码:128000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128MX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP48,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
页面大小:2K words并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:3/3.3 V
编程电压:3 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:128K最大待机电流:0.00005 A
子类别:Flash Memories最大压摆率:0.03 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN/TIN BISMUTH端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:NO
类型:NAND TYPE宽度:12 mm
Base Number Matches:1

NAND01GW3B2AN6E 数据手册

 浏览型号NAND01GW3B2AN6E的Datasheet PDF文件第51页浏览型号NAND01GW3B2AN6E的Datasheet PDF文件第52页浏览型号NAND01GW3B2AN6E的Datasheet PDF文件第53页浏览型号NAND01GW3B2AN6E的Datasheet PDF文件第55页浏览型号NAND01GW3B2AN6E的Datasheet PDF文件第56页浏览型号NAND01GW3B2AN6E的Datasheet PDF文件第57页 
DC and AC parameters  
NAND01G-B2B, NAND02G-B2C  
Figure 33. Resistor value versus waveform timings for Ready/Busy signal  
V
= 1.8V, C = 30pF  
V = 3.3V, C = 100pF  
DD L  
DD  
L
400  
300  
200  
400  
300  
200  
4
3
2
4
3
2
400  
300  
2.4  
200  
1.7  
120  
1.2  
100  
0
1
100  
0
1
0.85  
0.8  
100  
3.6  
90  
0.57  
0.6  
3.6  
60  
1.7  
0.43  
1.7  
30  
1.7  
3.6  
3.6  
1.7  
1
2
3
4
1
2
3
4
R
(KΩ)  
R (KΩ)  
P
P
t
t
r
ibusy  
f
ai07565B  
1. T = 25°C.  
11.2  
Data protection  
The Numonyx NAND device is designed to guarantee data protection during power  
transitions.  
A V detection circuit disables all NAND operations, if V is below the V threshold.  
LKO  
DD  
DD  
In the V range from V  
to the lower limit of nominal range, the WP pin should be kept  
DD  
LKO  
low (V ) to guarantee hardware protection during power transitions as shown in the below  
IL  
figure.  
Figure 34. Data protection  
Nominal Range  
V
DD  
V
LKO  
Locked  
Locked  
W
Ai11086  
54/60  

NAND01GW3B2AN6E 替代型号

型号 品牌 替代类型 描述 数据表
NAND01GW3B2BN6E STMICROELECTRONICS

类似代替

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GW3A2AN6E STMICROELECTRONICS

完全替代

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND01GW3B2AN6 STMICROELECTRONICS

类似代替

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

与NAND01GW3B2AN6E相关器件

型号 品牌 获取价格 描述 数据表
NAND01GW3B2AN6F STMICROELECTRONICS

获取价格

128MX8 FLASH 3V PROM, 25000ns, PDSO48, 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48
NAND01GW3B2AN6F NUMONYX

获取价格

Flash, 128MX8, 25000ns, PDSO48, 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48
NAND01GW3B2AN6T STMICROELECTRONICS

获取价格

暂无描述
NAND01GW3B2AV1 NUMONYX

获取价格

Flash, 128MX8, 25000ns, PDSO48, 12 X 17 MM, 0.65 MM HEIGHT, PLASTIC, USOP-48
NAND01GW3B2AV1E NUMONYX

获取价格

Flash, 128MX8, 25000ns, PDSO48, 12 X 17 MM, 0.65 MM HEIGHT, ROHS COMPLIANT, PLASTIC, USOP-
NAND01GW3B2AV1F NUMONYX

获取价格

Flash, 128MX8, 25000ns, PDSO48, 12 X 17 MM, 0.65 MM HEIGHT, ROHS COMPLIANT, PLASTIC, USOP-
NAND01GW3B2AV1T NUMONYX

获取价格

Flash, 128MX8, 25000ns, PDSO48, 12 X 17 MM, 0.65 MM HEIGHT, PLASTIC, USOP-48
NAND01GW3B2AV6 NUMONYX

获取价格

128MX8 FLASH 3V PROM, 25000ns, PDSO48, 12 X 17 MM, 0.65 MM HEIGHT, PLASTIC, USOP-48
NAND01GW3B2AV6E NUMONYX

获取价格

128MX8 FLASH 3V PROM, 25000ns, PDSO48, 12 X 17 MM, 0.65 MM HEIGHT, ROHS COMPLIANT, PLASTIC
NAND01GW3B2AV6T NUMONYX

获取价格

128MX8 FLASH 3V PROM, 25000ns, PDSO48, 12 X 17 MM, 0.65 MM HEIGHT, PLASTIC, USOP-48