Datasheet > NAND01G-N

NAND01G-N

更新时间： 2024-11-04 10:29:31

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存动态存储器
页数	文件大小	规格书
23页	214K
描述
1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM, 1.8V, Multi-Chip Package

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中文翻译

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数据手册

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NAND01G-N 数据手册

NAND01G-N

1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and

512 Mbit (x16) LPSDRAM, 1.8V, Multi-Chip Package

PRELIMINARY DATA

Features summary

■ Multi-chip Package

– NAND Flash Memory

FBGA

– 512 Mbit or 1 Gbit (x8/x16) Large Page

Size NAND Flash Memory

– 512 Mbit (x16) SDR or DDR LPSDRAM

■ Temperature range

TFBGA107 10.5 x 13 x 1.2mm

TFBGA149 10 x 13.5 x 1.2mm

– -30 up to 85 °C

■ Supply voltage

– NAND Flash : V_DDF= 1.7V to 1.95V

– LPSDRAM: V_DDD= V_DDQD= 1.7V to 1.9V

■ Electronic Signature

■ ECOPACK packages

SDR/DDR LPSDRAM

■ Interface: x16 bus width

Flash Memory

■ Programmable Partial Array Self Refresh

■ Auto Temperature Compensated Self Refresh

■ Deep Power Down mode

■ Nand Interface

– x8 or x16 bus width

– Multiplexed address/data

■ 1.8V LVCMOS interface

■ Page size

– x8 device: (2048 + 64 spare) Bytes

– x16 device: (1024 + 32 spare) Words

■ Quad internal Banks controlled by BA0 and

BA1

■ Wrap sequence: Sequential/Interleaved

■ Automatic and Controlled Precharge

■ Auto Refresh and Self Refresh

■ 8,192 Refresh Cycles/64ms

■ Block size

– x8 device: (128K + 4K spare) Bytes

– x16 device: (64K + 2K spare) Words

■ Page Read/Program

– Random access: 25µs (max)

– Sequential access: 50ns (min)

– Page program time: 300µs (typ)

■ Burst Termination by Burst Stop command and

Precharge Command

■ Copy Back Program mode

– Fast page copy without external buffering

■ Fast Block Erase

– Block Erase time: 2ms (typ)

■ Chip Enable ‘don’t care’

– for simple interfacing with microcontrollers

■ Status Register

January 2006

Rev1.0

1/23

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

www.st.com

12 3 4 5 6 7...23

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与NAND01G-N相关器件

型号	品牌	获取价格	描述	数据表
NAND01GR3A	STMICROELECTRONICS	获取价格	128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND01GR3A0AN1	STMICROELECTRONICS	获取价格	128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND01GR3A0AN1E	STMICROELECTRONICS	获取价格	128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND01GR3A0AN1F	STMICROELECTRONICS	获取价格	128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND01GR3A0AN1T	STMICROELECTRONICS	获取价格	128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND01GR3A0AN6	STMICROELECTRONICS	获取价格	128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND01GR3A0AN6E	STMICROELECTRONICS	获取价格	128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND01GR3A0AN6F	STMICROELECTRONICS	获取价格	128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND01GR3A0AN6T	STMICROELECTRONICS	获取价格	128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND01GR3A0AV1	STMICROELECTRONICS	获取价格	128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash

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