是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 包装说明: | R-XXMA-X |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.79 | Is Samacsys: | N |
配置: | BRIDGE, 4 ELEMENTS | 二极管元件材料: | SILICON |
二极管类型: | BRIDGE RECTIFIER DIODE | JESD-30 代码: | R-XXMA-X |
JESD-609代码: | e0 | 元件数量: | 4 |
相数: | 1 | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | MICROELECTRONIC ASSEMBLY |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | UNSPECIFIED | 端子位置: | UNSPECIFIED |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
N50480M1FB1S | MICROSEMI |
获取价格 |
Bridge Rectifier Diode, 1 Phase, Silicon, | |
N50480M1FBC1S | MICROSEMI |
获取价格 |
Bridge Rectifier Diode, 1 Phase, Silicon, | |
N50480M1FN1S | MICROSEMI |
获取价格 |
Bridge Rectifier Diode, 1 Phase, Silicon, | |
N50480M1TB1S | MICROSEMI |
获取价格 |
Bridge Rectifier Diode, 1 Phase, Silicon, | |
N50480M1TBC1S | MICROSEMI |
获取价格 |
Bridge Rectifier Diode, 1 Phase, Silicon, | |
N50480M1TN1S | MICROSEMI |
获取价格 |
Bridge Rectifier Diode, 1 Phase, Silicon, | |
N50480N1EB1S | MICROSEMI |
获取价格 |
Silicon Power Rectifier Assemblies Plate Heatsink | |
N50480N1EC1S | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, Silicon, | |
N50480N1EN1S | MICROSEMI |
获取价格 |
Silicon Power Rectifier Assemblies Plate Heatsink | |
N50480N1FB1S | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, Silicon, |