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N3904HK220

更新时间： 2024-11-06 19:45:55
品牌 Logo 应用领域
IXYS 栅栅极
页数 文件大小 规格书
11页 407K
描述
Silicon Controlled Rectifier, 7703A I(T)RMS, 2200V V(DRM), 2200V V(RRM), 1 Element

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N3904HK220 技术参数

生命周期：Obsolete包装说明：DISK BUTTON, O-XXDB-X3
Reach Compliance Code：unknownHTS代码：8541.30.00.80
风险等级：5.82配置：SINGLE
最大直流栅极触发电流：300 mAJESD-30 代码：O-XXDB-X3
元件数量：1端子数量：3
封装主体材料：UNSPECIFIED封装形状：ROUND
封装形式：DISK BUTTON认证状态：Not Qualified
最大均方根通态电流：7703 A断态重复峰值电压：2200 V
重复峰值反向电压：2200 V表面贴装：YES
端子形式：UNSPECIFIED端子位置：UNSPECIFIED
触发设备类型：SCRBase Number Matches：1

N3904HK220 数据手册

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Date:- 30 May, 2007  
Data Sheet Issue:- 1  
WESTCODE  
An IXYS Company  
Provisional Data  
Wespack Phase Control Thyristor  
Types N3904HK200 to N3904HK220  
Development Type No.: NX160HK200-220  
Absolute Maximum Ratings  
MAXIMUM  
LIMITS  
VOLTAGE RATINGS  
UNITS  
VDRM  
VDSM  
VRRM  
VRSM  
Repetitive peak off-state voltage, (note 1)  
Non-repetitive peak off-state voltage, (note 1)  
Repetitive peak reverse voltage, (note 1)  
Non-repetitive peak reverse voltage, (note 1)  
2000-2200  
2000-2200  
2000-2200  
2100-2300  
V
V
V
V
MAXIMUM  
LIMITS  
OTHER RATINGS  
UNITS  
IT(AV)M  
IT(AV)M  
IT(AV)M  
Maximum average on-state current, Tsink=55°C, (note 2)  
Maximum average on-state current. Tsink=85°C, (note 2)  
Maximum average on-state current. Tsink=85°C, (note 3)  
3904  
A
A
2682  
1506  
A
IT(RMS)M Nominal RMS on-state current, Tsink=25°C, (note 2)  
7703  
A
IT(d.c.)  
ITSM  
ITSM2  
I2t  
D.C. on-state current, Tsink=25°C, (note 4)  
6685  
A
Peak non-repetitive surge tp=10ms, Vrm=60%VRRM, (note 5)  
Peak non-repetitive surge tp=10ms, Vrm≤10V, (note 5)  
I2t capacity for fusing tp=10ms, Vrm=60%VRRM, (note 5)  
I2t capacity for fusing tp=10ms, Vrm≤10V, (note 5)  
50.9  
kA  
kA  
A2s  
A2s  
56.0  
12.95×106  
15.68×106  
100  
I2t  
(continuous, 50Hz)  
(repetitive, 50Hz, 60s)  
(non-repetitive)  
(di/dt)cr Critical rate of rise of on-state current (note 6)  
200  
A/µs  
400  
VRGM  
PG(AV)  
PGM  
Peak reverse gate voltage  
Mean forward gate power  
Peak forward gate power  
Operating temperature range  
Storage temperature range  
5
V
5
W
W
°C  
°C  
30  
Tj op  
-40 to +125  
-40 to +150  
Tstg  
Notes:-  
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.  
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.  
3) Cathode side cooled, single phase; 50Hz, 180° half-sinewave.  
4) Double side cooled.  
5) Half-sinewave, 125°C Tj initial.  
6) VD=67% VDRM, ITM=2000A, IFG=2A, tr≤0.5µs, Tcase=125°C.  
Provisional Data Sheet. Types N3904HK200 to N3904HK220 Issue 1  
Page 1 of 11  
May, 2007  
1234567...11

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