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N2086NS060 PDF预览

N2086NS060

更新时间: 2024-11-13 14:54:03
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
12页 264K
描述
Silicon Controlled Rectifier, 4207A I(T)RMS, 3439000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, 101A337, 3 PIN

N2086NS060 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:DISK BUTTON, O-CXDB-X3
针数:3Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.81
配置:SINGLE关态电压最小值的临界上升速率:1000 V/us
最大直流栅极触发电流:300 mA最大直流栅极触发电压:3 V
最大维持电流:1000 mAJESD-30 代码:O-CXDB-X3
最大漏电流:100 mA通态非重复峰值电流:35000 A
元件数量:1端子数量:3
最大通态电流:3439000 A最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:DISK BUTTON
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:4207 A断态重复峰值电压:600 V
重复峰值反向电压:600 V子类别:Silicon Controlled Rectifiers
表面贴装:YES端子形式:UNSPECIFIED
端子位置:UNSPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SCRBase Number Matches:1

N2086NS060 数据手册

 浏览型号N2086NS060的Datasheet PDF文件第2页浏览型号N2086NS060的Datasheet PDF文件第3页浏览型号N2086NS060的Datasheet PDF文件第4页浏览型号N2086NS060的Datasheet PDF文件第5页浏览型号N2086NS060的Datasheet PDF文件第6页浏览型号N2086NS060的Datasheet PDF文件第7页 
Date:- 17 Mar, 2004  
Data Sheet Issue:- 2  
WESTCODE  
IXYS  
An  
Company  
Phase Control Thyristor  
Types N2086NS060 to N2086NS100  
Old Type No.: N610SH06-10  
Absolute Maximum Ratings  
MAXIMUM  
LIMITS  
600-1000  
600-1000  
600-1000  
700-1100  
VOLTAGE RATINGS  
UNITS  
VDRM  
VDSM  
VRRM  
VRSM  
Repetitive peak off-state voltage, (note 1)  
V
V
V
V
Non-repetitive peak off-state voltage, (note 1)  
Repetitive peak reverse voltage, (note 1)  
Non-repetitive peak reverse voltage, (note 1)  
MAXIMUM  
LIMITS  
OTHER RATINGS  
UNITS  
IT(AV)M  
IT(AV)M  
IT(AV)M  
IT(RMS)  
IT(d.c.)  
ITSM  
Maximum average on-state current. Tsink=55°C, (note 2)  
Maximum average on-state current. Tsink=85°C, (note 2)  
Maximum average on-state current. Tsink=85°C, (note 3)  
Nominal RMS on-state current. Tsink=25°C, (note 2)  
D.C. on-state current. Tsink=25°C, (note 4)  
2086  
A
A
1378  
792  
A
4207  
A
3439  
A
Peak non-repetitive surge tp=10ms, Vrm=60%VRRM, (note 5)  
35.0  
kA  
kA  
A2s  
A2s  
ITSM2  
38.0  
Peak non-repetitive surge tp=10ms, Vrm 10V, (note 5)  
I2t  
I2t capacity for fusing tp=10ms, Vrm=60%VRRM, (note 5)  
6.13×106  
7.22×106  
250  
I2t  
I2t capacity for fusing tp=10ms, Vrm 10V, (note 5)  
Maximum rate of rise of on-state current (continuous, 50Hz), (Note 6)  
(di/dt)cr Maximum rate of rise of on-state current (repetitive, 50Hz, 60s), (Note 6)  
Maximum rate of rise of on-state current (non-repetitive), (Note 6)  
500  
A/µs  
1000  
VRGM  
PG(AV)  
PGM  
Peak reverse gate voltage  
Mean forward gate power  
Peak forward gate power  
Operating temperature range  
Storage temperature range  
5
V
4
W
W
°C  
°C  
30  
Tj op  
-40 to +125  
-40 to +150  
Tstg  
Notes: -  
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.  
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.  
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.  
4) Double side cooled.  
5) Half-sinewave, 125°C Tj initial.  
6) VD=67% VDRM, ITM=1000A, IFG=2A, tr 0.5µs, Tcase=125°C.  
7) Rated VDRM  
.
Data Sheet. Types N2086NS060 to N2086NS100 Issue 2.  
Page 1 of 11  
March, 2004  

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