Datasheet > N1683CZ29

N1683CZ29

更新时间： 2024-11-10 04:51:15

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
8页	74K
描述
Silicon Controlled Rectifier, 7680A I(T)RMS, 2900V V(DRM), 2900V V(RRM), 1 Element, 101A322, 3 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

N1683CZ29 数据手册

Date : Dec-99

Rat Rep : 99T12

Issue 2

WESTCODE

Converter thyristor

Type N1683xx29xxx to N1683xx35xxx

Absolute maximum ratings

MAXIMUM

LIMITS

VOLTAGE RATINGS

UNITS

V_DRM

V_DSM

V_RRM

V_RSM

Repetitive peak off-state voltage, (note 1).

Non-repetitive peak off-state voltage, (note 1).

Repetitive peak reverse voltage, (note 1).

Non-repetitive peak reverse voltage, (note 1).

2900-3500

3000-3600

MAXIMUM

LIMITS

RATINGS

UNITS

I_T(AV)

I_T(RMS)

I_T(d.c.)

I_TSM

I_TSM2

I²t

Mean on-state current, Tsink=55°C, (note 2).

Mean on-state current. Tsink=85°C, (note 5).

Mean on-state current. Tsink=85°C, (note 3).

Nominal RMS on-state current, 25°C, (note 2).

D.C. on-state current, 25°C, (note 7).

3890

2660

1610

7680

6650

Peak non-repetitive surge tp=10ms, V_RM=0.6V_RRM, (note 4).

Peak non-repetitive surge tp=10ms, V_RM≤10V, (note 4).

I²t capacity for fusing tp=10ms, V_RM=0.4V_RRM, (note 4).

I²t capacity for fusing tp=10ms, V_RM≤10V, (note 4).

I²t capacity for fusing tp=3ms, V_RM≤0.4V_RRM, (note 4).

Critical rate of rise of on-state current (continuous), (note 6).

Critical rate of rise of on-state current (Intermittent), (note 6).

Peak forward gate current.

60.0×10³

67.0×10³

18.0×10⁶

22.5×10⁶

10.2x10⁶

150

A²s

A/µs

I²t

di/dt

300

I_FGM

V_RGM

P_G(AV)

P_GM

V_GD

Peak reverse gate voltage.

Mean forward gate power.

Peak forward gate power.

Non-trigger gate voltage, (Note 5).

0.25

T_HS

Operating temperature range.

-40 to +125

-40 to +150

°C

T_stg

Storage temperature range.

Notes:-

1) De-rating factor of 0.13% per K is applicable for T_jbelow 25°C.

2) Doubleside cooled, single phase; 50Hz, 180° half-sinewave.

3) Singleside cooled, single phase; 50Hz, 180° half-sinewave.

4) Half-sinewave, 125°C T_jinitial.

5) Rated V_DRM.

6) V_D=67%V_DRM, I_T=6000A, I_FG=2A, t_r=500ns.

7) Doubleside cooled.

Types N1683xx29xxx to N1683xx35xxx Rating Report 99T12

page 1 of 8

December, 1999

12 3 4 5 6 7 8

中文翻译

下载PDF

与N1683CZ29相关器件

型号	品牌	获取价格	描述	数据表
N1683CZ29GOO	IXYS	获取价格	Silicon Controlled Rectifier, 7680 A, 2900 V, SCR, 101A322, 3 PIN
N1683CZ29HOO	IXYS	获取价格	Silicon Controlled Rectifier, 7680A I(T)RMS, 2900V V(DRM), 2900V V(RRM), 1 Element, 101A32
N1683CZ29LOO	IXYS	获取价格	Silicon Controlled Rectifier, 7680 A, 2900 V, SCR, 101A322, 3 PIN
N1683CZ30	IXYS	获取价格	Silicon Controlled Rectifier, 7680A I(T)RMS, 3000V V(DRM), 3000V V(RRM), 1 Element, 101A32
N1683CZ30GOO	IXYS	获取价格	Silicon Controlled Rectifier, 7680A I(T)RMS, 3000V V(DRM), 3000V V(RRM), 1 Element, 101A32
N1683CZ30HOO	IXYS	获取价格	Silicon Controlled Rectifier, 7680A I(T)RMS, 3000V V(DRM), 3000V V(RRM), 1 Element, 101A32
N1683CZ30JOO	IXYS	获取价格	Silicon Controlled Rectifier, 7680 A, 3000 V, SCR, 101A322, 3 PIN
N1683CZ30KOO	IXYS	获取价格	Silicon Controlled Rectifier, 7680 A, 3000 V, SCR, 101A322, 3 PIN
N1683CZ30LOO	IXYS	获取价格	Silicon Controlled Rectifier, 7680 A, 3000 V, SCR, 101A322, 3 PIN
N1683CZ31	IXYS	获取价格	Silicon Controlled Rectifier, 7680A I(T)RMS, 3100V V(DRM), 3100V V(RRM), 1 Element, 101A32

与N1683CZ29相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

22
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

21
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

47
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

39

产品中心

服务支持

精选活动

关于我们

帮助中心

N1683CZ29

N1683CZ29 数据手册

与N1683CZ29相关器件

与N1683CZ29相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

N1683CZ29

N1683CZ29 数据手册

与N1683CZ29相关器件

与N1683CZ29相关文章

您还可以找

您在本页遇到什么问题？