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N1159NC400 PDF预览

N1159NC400

更新时间: 2024-11-07 16:58:11
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
11页 447K
描述
Silicon Controlled Rectifier, 2268A I(T)RMS, 4000V V(DRM), 4000V V(RRM), 1 Element

N1159NC400 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CXDB-X4
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.8Is Samacsys:N
配置:SINGLE最大直流栅极触发电流:300 mA
JESD-30 代码:O-CXDB-X4元件数量:1
端子数量:4封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:DISK BUTTON
认证状态:Not Qualified最大均方根通态电流:2268 A
断态重复峰值电压:4000 V重复峰值反向电压:4000 V
表面贴装:YES端子形式:UNSPECIFIED
端子位置:UNSPECIFIED触发设备类型:SCR
Base Number Matches:1

N1159NC400 数据手册

 浏览型号N1159NC400的Datasheet PDF文件第2页浏览型号N1159NC400的Datasheet PDF文件第3页浏览型号N1159NC400的Datasheet PDF文件第4页浏览型号N1159NC400的Datasheet PDF文件第5页浏览型号N1159NC400的Datasheet PDF文件第6页浏览型号N1159NC400的Datasheet PDF文件第7页 
Date:- 9 Apr, 2003  
Data Sheet Issue:- 1  
Phase Control Thyristor  
Types N1159NC380 to N1159NC420  
Old Type No.: N500CH30-42  
Absolute Maximum Ratings  
MAXIMUM  
LIMITS  
VOLTAGE RATINGS  
UNITS  
VDRM  
VDSM  
VRRM  
VRSM  
Repetitive peak off-state voltage, (note 1)  
Non-repetitive peak off-state voltage, (note 1)  
Repetitive peak reverse voltage, (note 1)  
Non-repetitive peak reverse voltage, (note 1)  
3800-4200  
3800-4200  
3800-4200  
3900-4300  
V
V
V
V
MAXIMUM  
LIMITS  
OTHER RATINGS  
UNITS  
IT(AV)M  
IT(AV)M  
IT(AV)M  
Maximum average on-state current, Tsink=55°C, (note 2)  
Maximum average on-state current. Tsink=85°C, (note 2)  
Maximum average on-state current. Tsink=85°C, (note 3)  
1159  
A
A
809  
501  
A
IT(RMS)M Nominal RMS on-state current, Tsink=25°C, (note 2)  
2268  
2015  
14.5  
A
IT(d.c.)  
D.C. on-state current, Tsink=25°C, (note 4)  
A
ITSM  
ITSM2  
I2t  
I2t  
Peak non-repetitive surge tp=10ms, Vrm=0.6VRRM, (note 5)  
kA  
kA  
A2s  
A2s  
A/µs  
A/µs  
V
16.1  
Peak non-repetitive surge tp=10ms, Vrm 10V, (note 5)  
I2t capacity for fusing tp=10ms, Vrm=0.6VRRM, (note 5)  
1.05×106  
1.30×106  
150  
I2t capacity for fusing tp=10ms, Vrm 10V, (note 5)  
Critical rate of rise of on-state current (repetitive), (Note 6)  
Critical rate of rise of on-state current (non-repetitive), (Note 6)  
Peak reverse gate voltage  
(di/dt)cr  
300  
VRGM  
PG(AV)  
PGM  
5
Mean forward gate power  
2
W
Peak forward gate power  
30  
W
Tj op  
Operating temperature range  
-40 to +125  
-40 to +150  
°C  
°C  
Tstg  
Storage temperature range  
Notes:-  
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.  
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.  
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.  
4) Double side cooled.  
5) Half-sinewave, 125°C Tj initial.  
6) VD=67% VDRM, IFG=2A, tr 0.5µs, Tcase=125°C.  
Data Sheet. Types N1159NC380 to N1159NC420 Issue 1  
Page 1 of 11  
April, 2003  

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