Datasheet > N0801S

N0801S

更新时间： 2024-11-24 12:33:11

品牌	Logo	应用领域
瑞萨 - RENESAS		晶体晶体管
页数	文件大小	规格书
5页	85K
描述
NPN SILICON EPITAXIAL TRANSISTOR

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N0801S 数据手册

Data Sheet

N0801S

NPN SILICON EPITAXIAL TRANSISTOR

R07DS0729EJ0100

Rev.1.00

May 30, 2012

FEATURES



Complements to N0801R.

_CEO= 80 V

_C(DC)= 1.0 A

Miniature package SOT-23F (2SD1005: Package variation of 3pPoMM)

PRODUCT LINEUP

Part Number

Packing

Tape 3000p/reel

Package Name

SOT-23F

Package Code

PVSF0003ZA-A

Mass [TYP.]

0.0126g

N0801S-T1-AT

ABSOLUTE MAXIMUM RATINGS (T_a= 25C)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C(DC)

I_C(pulse)

P_T1

Ratings

Unit

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current (DC)

Collector Current (pulse) *¹

Total Power Dissipation

Total Power Dissipation *²

Junction Temperature

Storage Temperature

100

5.0

1.0

1.5

0.2

C

P_T2

1.0

T_j

150

T_stg

55 to 150

Note *1. PW  10 ms, Duty Cycle  50%

*2. FR-4 board size 2500 mm² 1.6 mm, t  5 sec

ELECTRICAL CHARACTERISTICS (T_a= 25C)

Parameter

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Symbol

I_CBO

Condition

V_CB= 100 V, I_E= 0

MIN.

TYP.

MAX.

100

Unit

I_EBO

h_FE1

h_FE2

V_EB= 5.0 V, I_C= 0

100

V_CE= 2.0 V, I_C= 100 mA

V_CE= 2.0 V, I_C= 500 mA

I_C= 500 mA, I_B= 50 mA

V_CE= 10.0 V, I_C= 10 mA

V_CE= 5.0 V, I_E= 10 mA

160

140

0.2

0.9

640

400

DC Current Gain

V_CE(sat)

Collector Saturation Voltage

Base Saturation Voltage

Base to Emitter Voltage

Gain Bandwidth Product

Output Capacitance

Note *1. Pulsed

0.5

1.5

700

V_BE(sat)

V_BE

f_T

600

MHz

C_ob

V_CE= 10.0 V, I_E= 0, f = 1.0 MHz

h_FEClassification

Marking

hFE1

90 to 180

135 to 270

200 to 400

R07DS0729EJ0100 Rev.1.00

May 30, 2012

Page 1 of 5

12 3 4 5

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