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N086PH06JOO PDF预览

N086PH06JOO

更新时间: 2024-11-24 19:36:31
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
3页 425K
描述
Silicon Controlled Rectifier, 133.45A I(T)RMS, 175000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element

N086PH06JOO 技术参数

生命周期:Obsolete包装说明:POST/STUD MOUNT, O-MUPM-H3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84其他特性:HIGH RELIABILITY
配置:SINGLE关态电压最小值的临界上升速率:500 V/us
最大直流栅极触发电流:150 mA最大直流栅极触发电压:3 V
最大维持电流:600 mAJESD-30 代码:O-MUPM-H3
最大漏电流:20 mA通态非重复峰值电流:1700 A
元件数量:1端子数量:3
最大通态电流:175000 A封装主体材料:METAL
封装形状:ROUND封装形式:POST/STUD MOUNT
认证状态:Not Qualified最大均方根通态电流:133.45 A
重复峰值关态漏电流最大值:20000 µA断态重复峰值电压:600 V
重复峰值反向电压:600 V子类别:Silicon Controlled Rectifiers
表面贴装:NO端子形式:HIGH CURRENT CABLE
端子位置:UPPER触发设备类型:SCR
Base Number Matches:1

N086PH06JOO 数据手册

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与N086PH06JOO相关器件

型号 品牌 获取价格 描述 数据表
N086PH06KOO IXYS

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Silicon Controlled Rectifier, 133.45A I(T)RMS, 175000mA I(T), 600V V(DRM), 600V V(RRM), 1
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Silicon Controlled Rectifier, 133.45A I(T)RMS, 85000mA I(T), 800V V(DRM), 800V V(RRM), 1 E
N086PH08HOO IXYS

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Silicon Controlled Rectifier, 133.45A I(T)RMS, 175000mA I(T), 800V V(DRM), 800V V(RRM), 1
N086PH08LOO IXYS

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Silicon Controlled Rectifier, 133.45A I(T)RMS, 175000mA I(T), 800V V(DRM), 800V V(RRM), 1
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Silicon Controlled Rectifier, 133.45A I(T)RMS, 85000mA I(T), 1000V V(DRM), 1000V V(RRM), 1
N086PH12 IXYS

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Silicon Controlled Rectifier, 133.45A I(T)RMS, 85000mA I(T), 1200V V(DRM), 1200V V(RRM), 1
N086PH12GOO IXYS

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Silicon Controlled Rectifier, 133.45A I(T)RMS, 175000mA I(T), 1200V V(DRM), 1200V V(RRM),
N086PH12JOO IXYS

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Silicon Controlled Rectifier, 133.45A I(T)RMS, 175000mA I(T), 1200V V(DRM), 1200V V(RRM),
N086PH14HOO IXYS

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Silicon Controlled Rectifier, 133.45A I(T)RMS, 175000mA I(T), 1400V V(DRM), 1400V V(RRM),
N086PH14KOO IXYS

获取价格

Silicon Controlled Rectifier, 133.45A I(T)RMS, 175000mA I(T), 1400V V(DRM), 1400V V(RRM),