Datasheet > N04Q1618C2BX-15C

N04Q1618C2BX-15C

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
AMI		静态存储器
页数	文件大小	规格书
13页	295K
描述
4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K】16 bit POWER SAVER TECHNOLOGY

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N04Q1618C2BX-15C 数据手册

N04Q1618C2B

AMI Semiconductor, Inc.

Advance Information

Timing Waveform of Write Cycle (WE control)

Address

CE1

CE2

LB, UB

High-Z

Data Valid

Data In

WHZ

High-Z

Data Out

Timing Waveform of Write Cycle (CE1 Control)

Address

CE1

(for CE2 Control, use

inverted signal)

LB, UB

Data Valid

Data In

WHZ

High-Z

Data Out

Stock No. 23451-D 11/06

The specification is ADVANCE INFORMATION and subject to change without notice.

1...7 8 91011 12 13

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