Datasheet > N04Q1618C2BX-15C

N04Q1618C2BX-15C

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
AMI		静态存储器
页数	文件大小	规格书
13页	295K
描述
4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K】16 bit POWER SAVER TECHNOLOGY

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N04Q1618C2B

AMI Semiconductor, Inc.

Ordering Information

Advance Information

N04Q16 XX C2B X - XX X

C = 0^oC - 70^oC

Temperature

70 = 70ns

85 = 85ns

Performance

15 = 150ns (under development)

T2 = 44-pin TSOP II Green (RoHS Compliant)

B2 = 48-ball BGA Green (RoHS Compliant)

W = Wafer (KGD)

Package Type

12 = 1.2V (under development)

18 = 1.8V

Operating Voltage

Q = Low Power SRAM with VccQ for dual rail operation

Revision History

Revision

Date

Change Description

October 2005

Initial Advanced Release

Raised maximum Vcc to 3.6V for 3V device

February 2006

Added green packages

Changed dual rail to ‘Q’ part designator

Seperated 1,8V dual rail and 3V single rail

July 2006

Updated VccQ for TSOP

September 2006

Converted to AMI Semiconductor

AMI Semiconductor, Inc. ("AMIS") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice.

AMIS does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration pur-

poses only and they vary depending upon specific applications.

AMIS makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does AMIS assume any liability arising out of the application or use of

any product or circuit described herein. AMIS does not authorize use of its products as critical components in any application in which the failure of the AMIS product may be

expected to result in significant injury or death, including life support systems and critical medical instruments.

Stock No. 23451-D 11/06

The specification is ADVANCE INFORMATION and subject to change without notice.

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