Datasheet > N04Q1625C2BB2-70I

N04Q1625C2BB2-70I

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
NANOAMP		静态存储器
页数	文件大小	规格书
13页	300K
描述
4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K】16 bit POWER SAVER TECHNOLOGY

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NanoAmp Solutions, Inc.

670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035

ph: 408-935-7777, FAX: 408-935-7770

www.nanoamp.com

N04Q16yyC2B

Advance Information

4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual

Vcc and VccQ for Ultimate Power Reduction

256K×16 bit POWER SAVER TECHNOLOGY

Overview

Features

The N04Q16yyC2B are ultra-low power memory

devices containing a 4 Mbit Static Random Access

Memory organized as 262,144 words by 16 bits.

The device is designed and fabricated using

NanoAmp’s advanced CMOS technology to

provide ultra-low active and standby power. The

device operates with two chip enable (CE1 and

CE2) controls and output enable (OE) to allow for

easy memory expansion. Byte controls (UB and

LB) allow the upper and lower bytes to be

• Multiple Power Supply Ranges

1.1V - 1.3V

1.65V - 1.95V

2.3V - 2.7V

2.7V - 3.6V

• Dual Vcc / VccQ Power Supplies

1.2V Vcc with 3V VccQ

1.8V Vcc with 3V VccQ

2.5V Vcc with 3V VccQ

• Very low standby current

accessed independently. The 4Mb SRAM is

optimized for the ultimate in low power and is

suited for various applications where ultra-low-

power is critical such as medical applications,

battery backup and power sensitive hand-held

devices. The unique page mode operation saves

active operating power and the dual power supply

rails allow very low voltage operation while

maintaining 3V I/O capability. The device can

50nA typical for 1.2V operation

• Very low operating current

400µA typical for 1.2V operation at 1µs

• Very low Page Mode operating current

80µA typical for 1.2V operation at 1µs

• Simple memory control

Dual Chip Enables (CE1 and CE2)

Byte control for independent byte operation

Output Enable (OE) for memory expansion

operate over a very wide temperature range of 0 C

to +70 C for the lowest power and is also available

• Automatic power down to standby mode

• BGA, TSOP and KGD options

• RoHS Compliant

in the industrial range of -40 C to +85 C. The

devices are available in standard BGA and TSOP

packages. The devices are also available as

Known Good Die (KGD) for embedded package

applications.

Product Options

Typical

Vcc

(V)

VccQ

(V)

Speed

(nS)

Typical

Operating

Part Number

I/O

Standby

Current

Operating Current Temperature

N04Q1612C2Bx-15C

N04Q1618C2Bx-15C

N04Q1618C2Bx-70C

N04Q1625C2Bx-15C

N04Q1630C2Bx-70C

x16

50nA

1.2

1.8

1.2, 1.8, 3 150ns

0.4 mA @ 1MHz

150ns

1.8, 2.5, 3

0^oC to +70^oC

200nA

800nA

70ns

0.6 mA @ 1MHz

2.5

3.0

2.5, 3

3.0

150ns

70ns

0.6 mA @ 1MHz

2.2mA @ 1MHz

Stock No. 23451-B 2/06

The specification is ADVANCE INFORMATION and subject to change without notice.

12 3 4 5 6 7...13

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