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N04L1630C2BT2 PDF预览

N04L1630C2BT2

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
AMI 静态存储器
页数 文件大小 规格书
12页 194K
描述
4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K 】 16 bit POWER SAVER TECHNOLOGY TM

N04L1630C2BT2 数据手册

 浏览型号N04L1630C2BT2的Datasheet PDF文件第6页浏览型号N04L1630C2BT2的Datasheet PDF文件第7页浏览型号N04L1630C2BT2的Datasheet PDF文件第8页浏览型号N04L1630C2BT2的Datasheet PDF文件第10页浏览型号N04L1630C2BT2的Datasheet PDF文件第11页浏览型号N04L1630C2BT2的Datasheet PDF文件第12页 
N04L1630C2B  
AMI Semiconductor, Inc.  
Advance Information  
Timing Waveform of Write Cycle (WE control)  
t
WC  
Address  
t
WR  
t
AW  
CE1  
CE2  
t
CW  
t
BW  
LB, UB  
WE  
t
t
AS  
WP  
t
t
DH  
DW  
High-Z  
Data Valid  
Data In  
t
WHZ  
t
OW  
High-Z  
Data Out  
Timing Waveform of Write Cycle (CE1 Control)  
t
WC  
Address  
t
t
AW  
WR  
t
CE1  
CW  
(for CE2 Control, use  
inverted signal)  
t
AS  
t
BW  
LB, UB  
WE  
t
t
WP  
t
t
DH  
DW  
Data Valid  
Data In  
t
LZ  
WHZ  
High-Z  
Data Out  
(DOC# 14-02-042 ReI I ECN# 01-1374  
The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com.  

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