Datasheet > N04L163WC2AB2-85I

N04L163WC2AB2-85I

更新时间： 2024-02-22 21:21:03

品牌	Logo	应用领域
AMI		静态存储器内存集成电路
页数	文件大小	规格书
11页	186K
描述
Standard SRAM, 256KX16, 85ns, CMOS, PBGA48, GREEN, BGA-48

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N04L163WC2AB2-85I 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	GREEN, BGA-48	Reach Compliance Code：	unknown
风险等级：	5.78	最长访问时间：	85 ns
JESD-30 代码：	R-PBGA-B48	JESD-609代码：	e1
长度：	8 mm	内存密度：	4194304 bit
内存集成电路类型：	STANDARD SRAM	内存宽度：	16
功能数量：	1	端子数量：	48
字数：	262144 words	字数代码：	256000
工作模式：	ASYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	256KX16
封装主体材料：	PLASTIC/EPOXY	封装代码：	LFBGA
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, LOW PROFILE, FINE PITCH
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	260
认证状态：	Not Qualified	座面最大高度：	1.34 mm
最大供电电压 (Vsup)：	3.6 V	最小供电电压 (Vsup)：	2.3 V
标称供电电压 (Vsup)：	3 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	TIN SILVER COPPER	端子形式：	BALL
端子节距：	0.75 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	40	宽度：	6 mm
Base Number Matches：	1

N04L163WC2AB2-85I 数据手册

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AMI Semiconductor, Inc.

ULP Memory Solutions

670 North McCarthy Blvd. Suite 220

Milpitas, CA 95035

N04L163WC2A

PH: 408-935-7777, FAX: 408-935-7770

4Mb Ultra-Low Power Asynchronous CMOS SRAM

256K × 16 bit

Overview

Features

The N04L163WC2A is an integrated memory

device containing a 4 Mbit Static Random Access

Memory organized as 262,144 words by 16 bits.

The device is designed and fabricated using AMI

Semiconductor’s advanced CMOS technology to

provide both high-speed performance and ultra-low

power. The device operates with two chip enable

(CE1 and CE2) controls and output enable (OE) to

allow for easy memory expansion. Byte controls

(UB and LB) allow the upper and lower bytes to be

accessed independently and can also be used to

deselect the device. The N04L163WC2A is optimal

for various applications where low-power is critical

such as battery backup and hand-held devices.

The device can operate over a very wide

• Single Wide Power Supply Range

2.3 to 3.6 Volts

• Very low standby current

4.0µA at 3.0V (Typical)

• Very low operating current

2.0mA at 3.0V and 1µs (Typical)

• Very low Page Mode operating current

0.8mA at 3.0V and 1µs (Typical)

• Simple memory control

Dual Chip Enables (CE1 and CE2)

Byte control for independent byte operation

Output Enable (OE) for memory expansion

• Low voltage data retention

Vcc = 1.8V

temperature range of -40 C to +85 C and is

available in JEDEC standard packages compatible

with other standard 256Kb x 16 SRAMs

• Very fast output enable access time

25ns OE access time

• Automatic power down to standby mode

• TTL compatible three-state output driver

• Compact space saving BGA package avail-

able

• RoHS Compliant

Product Family

Standby

Power

Supply

(Vcc)

Operating

Current (Icc),

Typical

Operating

Speed

Current(I_SB),

Part Number

Package Type

Temperature

Options

Typical

N04L163WC2AB

N04L163WC2AT

N04L163WC2AB2

N04L163WC2AT2

48 - BGA

44 - TSOP II

2.3V - 3.6V 70ns @ 2.7V

4 µA

2 mA @ 1MHz

-40 C to +85 C

48 - BGA Green

44 - TSOP II Green

(DOC# 14-02-017 REV H ECN# 01-1268)

The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com.

12 3 4 5 6 7...11

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与N04L163WC2AB2-85I相关器件

型号	品牌	描述	获取价格	数据表
N04L163WC2AB-55I	ONSEMI	256KX16 STANDARD SRAM, 70ns, PBGA48, BGA-48	获取价格
N04L163WC2AB-70I	ONSEMI	256KX16 STANDARD SRAM, 70ns, PBGA48, BGA-48	获取价格
N04L163WC2AT	NANOAMP	4Mb Ultra-Low Power Asynchronous CMOS SRAM 25	获取价格
N04L163WC2AT2	NANOAMP	4Mb Ultra-Low Power Asynchronous CMOS SRAM 25	获取价格
N04L163WC2AT2-55I	ONSEMI	256KX16 STANDARD SRAM, 70ns, PDSO44, GREEN, TSOP2-44	获取价格
N04L163WC2AT2-85I	AMI	Standard SRAM, 256KX16, 85ns, CMOS, PDSO44, GREEN, TSOP2-44	获取价格

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