Datasheet > N04L1630C2BT2

N04L1630C2BT2

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
AMI		静态存储器
页数	文件大小	规格书
12页	194K
描述
4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K 】 16 bit POWER SAVER TECHNOLOGY TM

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N04L1630C2BT2 数据手册

N04L1630C2B

AMI Semiconductor, Inc.

Timing Waveform of Page Mode Read Cycle (WE = V )

Advance Information

Page Address (A0, A5 - A17)

Word Address (A1 - A4)

AAP

CE1

CE2

OHZ

OLZ

LB, UB

BHZ

BLZ

High-Z

Data Out

(DOC# 14-02-042 ReI I ECN# 01-1374

The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com.

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型号	品牌	描述	获取价格	数据表
N04L1630C2BT2-55I	AMI	Standard SRAM, 256KX16, 55ns, CMOS, PDSO44, GREEN, TSOP2 - 44	获取价格
N04L1630C2BT2-70I	AMI	Standard SRAM, 256KX16, 70ns, CMOS, PDSO44, GREEN, TSOP2 - 44	获取价格
N04L1630C2BT-55I	NANOAMP	Standard SRAM, 256KX16, 55ns, CMOS, PDSO44	获取价格
N04L1630C2BT-85I	NANOAMP	Standard SRAM, 256KX16, 85ns, CMOS, PDSO44	获取价格
N04L163WC1A	NANOAMP	4Mb Ultra-Low Power Asynchronous CMOS SRAM	获取价格
N04L163WC1AB	NANOAMP	4Mb Ultra-Low Power Asynchronous CMOS SRAM	获取价格