Datasheet > N0302P

N0302P

更新时间： 2022-11-26 22:38:05

品牌	Logo	应用领域
瑞萨 - RENESAS		晶体晶体管场效应晶体管开关
页数	文件大小	规格书
8页	257K
描述
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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N0302P 数据手册

N0302P

TYPICAL CHARACTERISTICS (TA = 25°C)

DERATING FACTOR OF FORWARD BIAS

SAFE OPERATING AREA

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

120

100

1.6

1.4

1.2

Mounted on 2500 mm²x 35 μ m

Coper Pad Connected to

Drain Electrode, t ≤ 5 sec

0.8

0.6

0.4

0.2

100 125 150 175

TA - Ambient Temperature - °C

FORWARD BIAS SAFE OPERATING AREA

-100

-10

T = 25°C

Single Pulse

D(pulse) = –17.6 A

¹m

¹0

D(DC) = –4.4 A

¹0

-1

-0.1

Mounted on FR-4 board of

50 mm x 50 mm x 1.6 mm,

copper foil 50 mm x 50 mm, t ≤ 5 sec

-0.01

-0.1

-1

-10

-100

V^DS- Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1000

100

Mounted on 2500 mm²x 35 μ m

Coper Pad Connected to Drain Electrode

Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm

0.1

0.1 m

1 m

10 m

100 m

100

1000

PW - Pulse Width - s

Data Sheet D20205EJ1V0DS

1 2 3 456 7 8

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