Datasheet > N0302P

N0302P

更新时间： 2022-11-26 22:38:05

品牌	Logo	应用领域
瑞萨 - RENESAS		晶体晶体管场效应晶体管开关
页数	文件大小	规格书
8页	257K
描述
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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数据手册

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N0302P 数据手册

N0302P

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

DRAIN CURRENT

SWITCHING CHARACTERISTICS

150

100

Pulsed

GS = –4.0 V

130

110

d(off)

d(on)

–4.5 V

–10 V

DD = –15 V

GS = –10 V

RG = 10 Ω

-0.1

-1

-10

-100

-0.1

-1

-10

-100

ID - Drain Current - A

APACITANCE vs. DRAIN TO SOURCE VOLTAGE

SOURCE TO DRAIN DIODE

FORWARD VOLTAGE

1000

100

-100

-10

Pulsed

iss

-1

oss

rss

GS = 0 V

-0.1

GS = 0 V

f = 1 MHz

-0.01

-0.1

-1

-10

-100

0.0

0.5

1.0

1.5

VDS - Drain to Source Voltage - V

VF(S-D) - Source to Drain Voltage - V

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

-10

-9

-8

-7

-6

-5

-4

-3

-2

-1

= –4.4 A

DD = –24 V

–15 V

–6 V

1 2 3 4 5 6

7 8 9 10 11 12 13 14 15 16

Q^G- Gate Change - nC

Data Sheet D20205EJ1V0DS

1...4 5 678

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