DATA SHEET
MOS FIELD EFFECT TRANSISTOR
N0302P
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The N0302P is a switching device, which can be driven directly by a 4.0 V
power source.
PACKAGE DRAWING (Unit: mm)
This N0302P features a low on-state resistance and excellent switching
characteristics, and is suitable for applications such as power switch of
portable machine and so on.
2.9 0.1
3
0.85 0.05
0.165 0.05
0 to 0.025
FEATURES
•
•
4.0 V drive available
Low on-state resistance
RDS(on)1 = 54 mΩ MAX. (VGS = −10 V, ID = −2.2 A)
RDS(on)2 = 77 mΩ MAX. (VGS = −4.5 V, ID = −2.2 A)
RDS(on)3 = 150 mΩ MAX. (VGS = −4.0 V, ID = −2.2 A)
Built-in gate protection diode
2
1
0.42 0.05
1.9
•
1: Source
2: Gate
3: Drain
ORDERING INFORMATION
PART NUMBER
N0302P-T1-AT
Marking: XW
LEAD PLATING
Pure Sn (Tin)
PACKING
PACKAGE
SOT-23F
Tape 3000 p/reel
EQUIVALENT CIRCUIT
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
−30
m20
V
V
Drain
m4.4
A
Body
Diode
Drain Current (pulse) Note1
m17.6
0.2
A
Gate
Total Power Dissipation
W
W
°C
°C
Gate
Protection
Diode
Total Power Dissipation Note2
Channel Temperature
PT2
1.3
Source
Tch
150
Storage Temperature
Tstg
−55 to +150
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board of 50 mm × 50 mm × 1.6 mm, copper foil 100%, t ≤ 5 sec.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest
version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for
availability and additional information.
Document No.
Date Published January 2010 NS
Printed in Japan
D20205EJ1V0DS00 (1st edition)
2010