Datasheet > N0302P

N0302P

更新时间： 2022-11-26 22:38:05

品牌	Logo	应用领域
瑞萨 - RENESAS		晶体晶体管场效应晶体管开关
页数	文件大小	规格书
8页	257K
描述
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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N0302P 数据手册

N0302P

DRAIN CURRENT vs.

FORWARD TRANSFER CHARACTERISTICS

DRAIN TO SOURCE VOLTAGE

-20

-18

-16

-14

-12

-10

-8

-100

-10

DS = –10 V

GS = –10 V

Pulsed

–4.5 V

–4.0 V

-1

-0.1

= –25°C

25°C

75°C

125°C

-0.01

-0.001

-0.0001

-6

-4

-2

Pulsed

-2.5 -3

-0.5

-1

-1.5

-2

-1

-2

-3

-4

-5

V^DS- Drain to Source Voltage - V

VGS - Gate to Source Voltage - V

GATE CUT-OFF VOLTAGE vs.

CHANNEL TEMPERATURE

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

-2.4

-2.2

-2

DS = –10 V

= –1 mA

Pulsed

= –25°C

25°C

75°C

125°C

0.1

-1.8

-1.6

-1.4

-1.2

-1

0.01

-50

100

150

-0.01

-0.1

-1

-10

-100

I^D- Drain Current - A

T^ch- Channel Temperature - °C

RAIN TO SOURCE ON-STATE RESISTANCE vs.

CHANNEL TEMPERATURE

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE

100

170

ID = –2.2 A

Pulsed

90 Pulsed

150

130

110

GS = –4.0 V

–4.5 V

–10 V

ID = –2.2 A

-50

100

150

10 12 14 16 18 20

V^GS- Gate to Source Voltage - V

Tch - Channel Temperature - °C

Data Sheet D20205EJ1V0DS

1...3 4 567 8

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