5秒后页面跳转
N02L163WC2AT-55I PDF预览

N02L163WC2AT-55I

更新时间: 2024-02-16 16:23:37
品牌 Logo 应用领域
AMI 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
11页 185K
描述
Standard SRAM, 128KX16, 55ns, CMOS, PDSO44, TSOP2-44

N02L163WC2AT-55I 技术参数

是否Rohs认证:不符合生命周期:Transferred
包装说明:TSOP2-44Reach Compliance Code:unknown
风险等级:5.86Is Samacsys:N
最长访问时间:55 nsJESD-30 代码:R-PDSO-G44
JESD-609代码:e0长度:18.41 mm
内存密度:2097152 bit内存集成电路类型:STANDARD SRAM
内存宽度:16功能数量:1
端子数量:44字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128KX16封装主体材料:PLASTIC/EPOXY
封装代码:LSSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, LOW PROFILE, SHRINK PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):240认证状态:Not Qualified
座面最大高度:1.25 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.3 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN LEAD
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:10.16 mmBase Number Matches:1

N02L163WC2AT-55I 数据手册

 浏览型号N02L163WC2AT-55I的Datasheet PDF文件第1页浏览型号N02L163WC2AT-55I的Datasheet PDF文件第2页浏览型号N02L163WC2AT-55I的Datasheet PDF文件第4页浏览型号N02L163WC2AT-55I的Datasheet PDF文件第5页浏览型号N02L163WC2AT-55I的Datasheet PDF文件第6页浏览型号N02L163WC2AT-55I的Datasheet PDF文件第7页 
AMI Semiconductor, Inc.  
Functional Block Diagram  
N02L163WC2A  
Word  
Address  
Inputs  
Address  
Decode  
Logic  
A0 - A3  
Input/  
Page  
32K Page  
x 16 word  
x 16 bit  
Address  
Inputs  
Output  
I/O0 - I/O7  
Mux  
Address  
Decode  
Logic  
A4 - A16  
and  
RAM Array  
Buffers  
I/O8 - I/O15  
CE1  
CE2  
WE  
OE  
Control  
Logic  
UB  
LB  
Functional Description  
1
CE1  
CE2  
WE  
OE  
UB  
LB  
MODE  
POWER  
I/O0 - I/O15  
Standby2  
Standby2  
H
X
L
L
L
L
X
L
H
H
H
H
X
X
X
L
X
X
X
X3  
L
X
X
H
L1  
L1  
L1  
X
X
H
L1  
L1  
L1  
High Z  
High Z  
High Z  
Data In  
Data Out  
High Z  
Standby  
Standby  
Standby  
Active  
Standby  
Write3  
Read  
Active  
H
H
Active  
H
Active  
1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7  
are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown.  
2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally  
isolated from any external influence and disabled from exerting any influence externally.  
3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.  
1
Capacitance  
Item  
Symbol  
CIN  
Test Condition  
Min  
Max  
8
Unit  
pF  
VIN = 0V, f = 1 MHz, TA = 25oC  
VIN = 0V, f = 1 MHz, TA = 25oC  
Input Capacitance  
I/O Capacitance  
CI/O  
8
pF  
1. These parameters are verified in device characterization and are not 100% tested  
(DOC# 14-02-013 REV H ECN# 01-1270)  
The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com.  
3

与N02L163WC2AT-55I相关器件

型号 品牌 描述 获取价格 数据表
N02L163WC2AT-70I AMI Standard SRAM, 128KX16, 70ns, CMOS, PDSO44, TSOP2-44

获取价格

N02L163WN1A NANOAMP 2Mb Ultra-Low Power Asynchronous CMOS SRAM

获取价格

N02L163WN1AB NANOAMP 2Mb Ultra-Low Power Asynchronous CMOS SRAM

获取价格

N02L163WN1AB1 NANOAMP 2Mb Ultra-Low Power Asynchronous CMOS SRAM

获取价格

N02L163WN1AB1-55I NANOAMP 2Mb Ultra-Low Power Asynchronous CMOS SRAM

获取价格

N02L163WN1AB1-70I NANOAMP Standard SRAM, 128KX16, 70ns, CMOS, PBGA48

获取价格