Datasheet > 存储 > SRAM> N02L163WN1AB-55I

N02L163WN1AB-55I

更新时间： 2024-01-31 10:09:27

品牌	Logo	应用领域
NANOAMP		存储内存集成电路静态存储器
页数	文件大小	规格书
11页	264K
描述
2Mb Ultra-Low Power Asynchronous CMOS SRAM

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技术参数
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N02L163WN1AB-55I 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	6 X 8 MM, BGA-48	Reach Compliance Code：	unknown
风险等级：	5.85	最长访问时间：	55 ns
I/O 类型：	COMMON	JESD-30 代码：	R-PBGA-B48
JESD-609代码：	e0	长度：	8 mm
内存密度：	2097152 bit	内存集成电路类型：	STANDARD SRAM
内存宽度：	16	功能数量：	1
端子数量：	48	字数：	131072 words
字数代码：	128000	工作模式：	ASYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	128KX16	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	LFBGA
封装等效代码：	BGA48,6X8,30	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, LOW PROFILE, FINE PITCH	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	240	电源：	3/3.3 V
认证状态：	Not Qualified	座面最大高度：	1.34 mm
最大待机电流：	0.00001 A	最小待机电流：	1.8 V
子类别：	SRAMs	最大压摆率：	0.016 mA
最大供电电压 (Vsup)：	3.6 V	最小供电电压 (Vsup)：	2.7 V
标称供电电压 (Vsup)：	3 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	TIN LEAD	端子形式：	BALL
端子节距：	0.75 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	30	宽度：	6 mm
Base Number Matches：	1

N02L163WN1AB-55I 数据手册

NanoAmp Solutions, Inc.

1982 Zanker Road, San Jose, CA 95112

ph: 408-573-8878, FAX: 408-573-8877

www.nanoamp.com

N02L163WN1A

2Mb Ultra-Low Power Asynchronous CMOS SRAM

128K × 16bit

Overview

Features

The N02L163WN1A is an integrated memory

device containing a 2 Mbit Static Random Access

Memory organized as 131,072 words by 16 bits.

The device is designed and fabricated using

NanoAmp’s advanced CMOS technology to

provide both high-speed performance and ultra-low

power. The device operates with a single chip

enable (CE) control and output enable (OE) to

allow for easy memory expansion. Byte controls

(UB and LB) allow the upper and lower bytes to be

accessed independently. The N02L163WN1A is

optimal for various applications where low-power is

critical such as battery backup and hand-held

devices. The device can operate over a very wide

• Single Wide Power Supply Range

2.3 to 3.6 Volts

• Very low standby current

2.0µA at 3.0V (Typical)

• Very low operating current

2.0mA at 3.0V and 1µs (Typical)

• Very low Page Mode operating current

0.8mA at 3.0V and 1µs (Typical)

• Simple memory control

Single Chip Enable (CE)

Byte control for independent byte operation

Output Enable (OE) for memory expansion

• Low voltage data retention

temperature range of -40 C to +85 C and is

available in JEDEC standard packages compatible

with other standard 128Kb x 16 SRAMs.

Vcc = 1.8V

• Very fast output enable access time

30ns OE access time

• Automatic power down to standby mode

• TTL compatible three-state output driver

• Compact space saving BGA package avail-

able

Product Family

Standby

Power

Supply

(Vcc)

Operating

Current (Icc),

Typical

Operating

Current (I_SB),

Part Number

Package Type

Speed

Temperature

Typical

N02L163WN1AB

N02L163WN1AT

N02L163WN1AB1

48 - BGA

44 - TSOP II

55ns @ 2.7V

70ns @ 2.3V

-40^oC to +85^oC

2.3V - 3.6V

2 µA

2 mA @ 1MHz

48 - BGA Pb-Free

N02L163WN1AT2 44 - TSOP II Green

(DOC# 14-02-014 REV L ECN# 01-1000)

The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.

12 3 4 5 6 7...11

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N02L163WN1AT	NANOAMP	2Mb Ultra-Low Power Asynchronous CMOS SRAM	获取价格
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N02L163WN1AT2-55I	NANOAMP	2Mb Ultra-Low Power Asynchronous CMOS SRAM	获取价格
N02L163WN1AT-55I	NANOAMP	2Mb Ultra-Low Power Asynchronous CMOS SRAM	获取价格
N02L163WN1AT-70I	NANOAMP	Standard SRAM, 128KX16, 70ns, CMOS, PDSO44	获取价格
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