N02L6181A
2Mb Ultra-Low Power Asynchronous CMOS SRAM
128Kx16 bit
Features
• Single Wide Power Supply Range
1.65 to 2.2 Volts
Overview
• Very low standby current
The N02L6181A is an integrated memory device
containing a 2 Mbit Static Random Access Memory
organized as 131,072 words by 16 bits. The device
is designed and fabricated using ON
0.5µA at 1.8V (Typical)
• Very low operating current
1.4mA at 1.8V and 1µs (Typical)
Semiconductor’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The base design is the same as ON
• Very low Page Mode operating current
0.5mA at 1.8V and 1µs (Typical)
• Simple memory control
Semiconductor’s N02L63W3A, which is processed
to operate at higher voltages. The device operates
with a single chip enable (CE) control and output
enable (OE) to allow for easy memory expansion.
Byte controls (UB and LB) allow the upper and
lower bytes to be accessed independently. The
N02L6181A is optimal for various applications
where low-power is critical such as battery backup
and hand-held devices. The device can operate
Single Chip Enable (CE)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.2V
• Very fast output enable access time
30ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Compact space saving BGA package
o
over a very wide temperature range of -40 C to
o
+85 C and is available in JEDEC standard
packages compatible with other standard 128Kb x
16 SRAMs.
Product Family
Standby
Power
Supply
(Vcc)
Operating
Current (Icc),
Max
Operating
Current (ISB),
Part Number
Package Type
Speed
Temperature
Max
N02L6181AB
N02L6181AB2
48 - BGA
70 and 85ns
@ 1.65V
-40oC to +85oC
1.65V - 2.2V
10 µA
3 mA @ 1MHz
Green 48-BGA
©2008 SCILLC. All rights reserved.
July 2008 - Rev. 4
Publication Order Number:
N02L6181A/D