Datasheet > N02L6181A

N02L6181A

更新时间： 2022-12-17 07:09:14

品牌	Logo	应用领域
安森美 - ONSEMI		静态存储器
页数	文件大小	规格书
11页	215K
描述
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit

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N02L6181A 数据手册

N02L6181A

Timing of Read Cycle (CE = OE = V , WE = V )

Address

Previous Data Valid

Data Valid

Data Out

Timing Waveform of Read Cycle (WE= V )

Address

OHZ

OLZ

LB, UB

LBLZ, UBLZ

LBHZ, UBHZ

High-Z

Data Valid

Data Out

Rev. 4 | Page 7 of 11 | www.onsemi.com

1...4 5 678 9 10 11

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型号	品牌	描述	获取价格	数据表
N02L6181AB27I	ONSEMI	2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit	获取价格
N02L6181AB27IT	ONSEMI	2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit	获取价格
N02L6181AB28I	ONSEMI	2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit	获取价格
N02L6181AB28IT	ONSEMI	2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit	获取价格
N02L6181AB7I	ONSEMI	2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit	获取价格
N02L6181AB7IT	ONSEMI	2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit	获取价格