Datasheet > N02L1618C1AB

N02L1618C1AB

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
NANOAMP		静态存储器
页数	文件大小	规格书
11页	263K
描述
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit

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N02L1618C1AB 数据手册

N02L1618C1A

Advance Information

NanoAmp Solutions, Inc.

Timing Waveform of Write Cycle (WE control)

Address

, t

LBW UBW

LB, UB

High-Z

Data Valid

Data In

WHZ

High-Z

DETAIL B

Data Out

Timing Waveform of Write Cycle (CE Control)

Address

, t

LBW UBW

LB, UB

Data Valid

Data In

WHZ

High-Z

Data Out

Stock No. 23265-A

The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.

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