Datasheet > N02L1618C1AB

N02L1618C1AB

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
NANOAMP		静态存储器
页数	文件大小	规格书
11页	263K
描述
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit

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N02L1618C1AB 数据手册

N02L1618C1A

Advance Information

NanoAmp Solutions, Inc.

Power Savings with Page Mode Operation (WE = V )

Page Address (A4 - A16 )

Word Address (A0 - A3)

Open page

...

Word 16

Word 1

Word 2

LB, UB

Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal

organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power

saving feature.

The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open

and 16-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant

bits and addressing the 16 words within the open page, power is reduced to the page mode value which is

considerably lower than standard operating currents for low power SRAMs.

Stock No. 23265-A

The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.

1 2 3 456 7 8...11

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N02L1618C1AB2-85I	AMI	Standard SRAM, 128KX16, 85ns, CMOS, PBGA48, GREEN, BGA-48	获取价格
N02L1618C1AB-70I	NANOAMP	2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit	获取价格
N02L1618C1AT	NANOAMP	2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit	获取价格
N02L1618C1AT2	NANOAMP	2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit	获取价格