5秒后页面跳转
N02L083WC2AN2 PDF预览

N02L083WC2AN2

更新时间: 2022-12-16 18:17:28
品牌 Logo 应用领域
NANOAMP 静态存储器
页数 文件大小 规格书
10页 223K
描述
2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K x 8 bit

N02L083WC2AN2 数据手册

 浏览型号N02L083WC2AN2的Datasheet PDF文件第1页浏览型号N02L083WC2AN2的Datasheet PDF文件第2页浏览型号N02L083WC2AN2的Datasheet PDF文件第4页浏览型号N02L083WC2AN2的Datasheet PDF文件第5页浏览型号N02L083WC2AN2的Datasheet PDF文件第6页浏览型号N02L083WC2AN2的Datasheet PDF文件第7页 
NanoAmp Solutions, Inc.  
N02L083WC2A  
1
Absolute Maximum Ratings  
Item  
Symbol  
VIN,OUT  
VCC  
Rating  
–0.3 to VCC+0.3  
–0.3 to 4.5  
500  
Unit  
V
Voltage on any pin relative to VSS  
Voltage on VCC Supply Relative to VSS  
Power Dissipation  
V
PD  
mW  
oC  
oC  
oC  
TSTG  
Storage Temperature  
–40 to 125  
TA  
Operating Temperature  
-40 to +85  
260oC, 10sec  
TSOLDER  
Soldering Temperature and Time  
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional  
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not  
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.  
Operating Characteristics (Over Specified Temperature Range)  
Typ1  
Item  
Symbol  
Test Conditions  
Min.  
Max  
Unit  
VCC  
VDR  
VIH  
VIL  
Supply Voltage  
Data Retention Voltage  
Input High Voltage  
2.3  
1.8  
3.0  
3.6  
V
V
Chip Disabled3  
V
CC+0.3  
1.8  
V
Input Low Voltage  
–0.3  
0.6  
V
VOH  
VOL  
ILI  
IOH = 0.2mA  
IOL = -0.2mA  
VCC–0.2  
Output High Voltage  
Output Low Voltage  
Input Leakage Current  
Output Leakage Current  
V
0.2  
0.5  
0.5  
V
VIN = 0 to VCC  
µA  
µA  
ILO  
OE = VIH or Chip Disabled  
VCC=3.6 V, VIN=VIH or VIL  
Chip Enabled, IOUT = 0  
Read/Write Operating Supply Current  
ICC1  
ICC2  
2.0  
4.0  
mA  
mA  
@ 1 µs Cycle Time2  
VCC=3.6 V, VIN=VIH or VIL  
Chip Enabled, IOUT = 0  
Read/Write Operating Supply Current  
12.0  
16.0  
@ 70 ns Cycle Time2  
Page Mode Operating Supply Current  
@ 70 ns Cycle Time2 (Refer to Power  
Savings with Page Mode Operation  
diagram)  
VCC=3.6 V, VIN=VIH or VIL  
Chip Enabled, IOUT = 0  
ICC3  
4.0  
2.0  
mA  
mA  
VCC=3.6 V, VIN=VIH or VIL  
Chip Enabled, IOUT = 0,  
f = 0  
Read/Write Quiescent Operating Sup-  
ply Current3  
ICC4  
3.0  
VIN = VCC or 0V  
Maximum Standby Current3  
Chip Disabled  
ISB1  
20.0  
10.0  
µA  
µA  
tA= 85oC, VCC = 3.6 V  
VCC = 1.8V, VIN = VCC or 0  
Chip Disabled, tA= 85oC  
Maximum Data Retention Current3  
IDR  
1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and not 100% tested.  
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive  
output capacitance expected in the actual system.  
3. This device assumes a standby mode if the chip is disabled (CE1 high or CE2 low). In order to achieve low standby current all  
inputs must be within 0.2 volts of either VCC or VSS.  
(DOC# 14-02-015 REV E ECN# 01-0998)  
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.  
3

与N02L083WC2AN2相关器件

型号 品牌 描述 获取价格 数据表
N02L083WC2AN2-55I NANOAMP Standard SRAM, 256KX8, 55ns, CMOS, PDSO32

获取价格

N02L083WC2AN-70I NANOAMP Standard SRAM, 256KX8, 70ns, CMOS, PDSO32

获取价格

N02L083WC2AT NANOAMP 2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K x 8 bit

获取价格

N02L083WC2AT2 NANOAMP 2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K x 8 bit

获取价格

N02L083WC2AT2-70I NANOAMP Standard SRAM, 256KX8, 70ns, CMOS, PDSO32

获取价格

N02L083WC2AT-55I NANOAMP Standard SRAM, 256KX8, 55ns, CMOS, PDSO32

获取价格