Datasheet > N02L083WC2AN2

N02L083WC2AN2

更新时间： 2022-12-16 18:17:28

品牌	Logo	应用领域
NANOAMP		静态存储器
页数	文件大小	规格书
10页	223K
描述
2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K x 8 bit

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N02L083WC2AN2 数据手册

NanoAmp Solutions, Inc.

N02L083WC2A

Timing Waveform of Write Cycle (WE control)

Address

CE1

CE2

High-Z

Data Valid

Data In

WHZ

High-Z

Data Out

Timing Waveform of Write Cycle (CE1 Control)

Address

CE1

(for CE2 Control, use

inverted signal)

Data Valid

Data In

WHZ

High-Z

Data Out

(DOC# 14-02-015 REV E ECN# 01-0998)

The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.

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型号	品牌	描述	获取价格	数据表
N02L083WC2AN2-55I	NANOAMP	Standard SRAM, 256KX8, 55ns, CMOS, PDSO32	获取价格
N02L083WC2AN-70I	NANOAMP	Standard SRAM, 256KX8, 70ns, CMOS, PDSO32	获取价格
N02L083WC2AT	NANOAMP	2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K x 8 bit	获取价格
N02L083WC2AT2	NANOAMP	2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K x 8 bit	获取价格
N02L083WC2AT2-70I	NANOAMP	Standard SRAM, 256KX8, 70ns, CMOS, PDSO32	获取价格
N02L083WC2AT-55I	NANOAMP	Standard SRAM, 256KX8, 55ns, CMOS, PDSO32	获取价格