MZB600
Zero Bias Detector Diode
Rev. V2
Features
Very Low Forward Voltage: 300 mV max. @ 1 mA
Low Tangential Signal Sensitivity: -42 dBm
Low Junction Capacitance: 0.2 pF
High Breakdown Voltage: 3 V
Available in Beam Lead, Multi-Junction Chip or
Packaged
RoHS* Compliant
Description
The MZB600 zero bias detector (ZBD) diode is a
sensitive, very low barrier height Schottky diode
designed for use in high frequency, low input power
detectors. Its very low barrier height results in
excellent sensitivity to very small signals without the
need for external bias current. This diode is available
as a five-junction common-anode chip, as a single-
junction beam lead or packaged in one of several
suitable packages. It is manufactured using a proven
diode fabrication process which optimizes diode
characteristics for optimal electrical performance and
excellent reliability.
Ordering Information1
Part Number
Package
chip (400 pc. waffle pack)
MZB600-C15P-W
MZB600-B11-GP
MZB600-19-6-W
MZB600-19-6-R
MZB600-32-W
MZB600-32SP
beam lead (100 pc. GelPak™)
CS19-6 (100 pc. waffle pack)
CS19-6 (3000 pc. Reel)
The low junction capacitance (0.2 pF typical) enables
the device to be used in sensitive detector circuits
with input signals up to 20 GHz.
CS32 (100 pc. waffle pack)
This rugged device is capable of reliable operation in
all military, commercial and industrial applications.
CS32SP-OFHC Cu
(100 pc. waffle pack)
1. Contact the factory for other packaging options.
Electrical Specifications: TA = +25°C
Parameter
Test Conditions
Unit
Min.
Typ.
Max.
Breakdown Voltage (VB)
IR = 100 µA
IF = 1 mA
V
3
—
—
Forward Voltage (VF)
Video Resistance (RV)
Junction Capacitance (CJ)
mV
Ω
—
—
—
—
3500
0.2
300
—
IF = 75 mA, 1 GHz
VR = 0 V, 1 MHz
pF
—
1
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DC-0014119