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MXSMLJ8.0CAE3 PDF预览

MXSMLJ8.0CAE3

更新时间： 2024-11-12 18:33:51
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
12页 950K
描述
Trans Voltage Suppressor Diode, 3000W, 8V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMLJ, 2 PIN

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MXSMLJ8.0CAE3 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：R-PDSO-C2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.34
其他特性：HIGH RELIABILITY最大击穿电压：9.83 V
最小击穿电压：8.89 V击穿电压标称值：9.36 V
最大钳位电压：13.6 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-214ABJESD-30 代码：R-PDSO-C2
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值反向功率耗散：3000 W元件数量：1
端子数量：2最高工作温度：150 °C
最低工作温度：-65 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性：BIDIRECTIONAL
最大功率耗散：1.61 W认证状态：Not Qualified
参考标准：MIL-19500最大重复峰值反向电压：8 V
子类别：Transient Suppressors表面贴装：YES
技术：AVALANCHE端子面层：MATTE TIN
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

MXSMLJ8.0CAE3 数据手册

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MSMLG5.0A – MSMLG170CAe3, MSMLJ5.0A – MSMLJ170CAe3 Surface  
Mount 3000 Watt Transient Voltage Suppressor  
1
Product Overview  
The MSMLG5.0A–MSMLG170CA and the MSMLJ5.0A–MSMLJ170CA series of high-reliability transient  
voltage suppressors (TVS) protect circuits from voltage spikes containing up to 3000 W (10/1000 μs  
model pulse). The SMLG gull-wing design in the DO-215AB package allows for visible solder connections.  
The SMLJ J-bend design in the DO-214AB package allows for greater PC board mounting density.  
Selections include unidirectional and bidirectional as well as RoHS-compliant versions. These are  
available with a variety of upscreening options for enhanced reliability. They protect against the  
secondary effects of lightning per IEC61000-4-5 and against voltage pulses from inductive switching  
environments and induced by RF radiation. Since their response time is virtually instantaneous, they can  
also be used in protection from ESD and EFT per IEC61000-4-2 and IEC61000-4-4.  
For the latest information, visit our website www.microsemi.com.  
1.1  
Features  
The following are key features of the MSMLG5.0A through MSMLG170CAe3 and the MSMLJ5.0A  
through MSMLJ170CAe3 devices:  
High-reliability devices with fabrication and assembly lot traceability for all M prefix devices  
All devices are 100% surge tested  
3σ lot norm screening performed on standby current (ID) for all M prefix devices  
Available in both unidirectional and bidirectional versions  
Moisture classification is “Level 1” with no dry pack required per IPC/JEDEC J-STD-020B for all M  
prefix devices.  
Enhanced reliability screening options with M prefix are available in reference to MIL-PRF-19500.  
Refer to High Reliability Up-Screened Plastic Products Portfolio for more details on the screening  
options (see Part Nomenclature for all available options).  
RoHS compliant versions available  
Axial-lead equivalent packages for thru-hole mounting are available as M5KP5.0A to M5KP110CA  
with 5000 W rating (contact Microsemi for other surface mount options).  
Microsemi Proprietary and Confidential. MSMLG5.0A–MSMLG170CAe3, MSMLJ5.0A–MSMLJ170CAe3 Datasheet Revision D  
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与MXSMLJ8.0CAE3相关器件

型号 品牌 获取价格 描述 数据表
MXSMLJ8.0CAE3/TR MICROSEMI

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MXSMLJ8.0CAE3TR MICROSEMI

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 		3000W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMLJ, 2 PIN
MXSMLJ8.0CATR MICROSEMI

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MXSMLJ8.0CATRE3 MICROSEMI

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MXSMLJ8.0CE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 3000W, 8V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MXSMLJ8.0E3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 3000W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXSMLJ8.0E3TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 3000W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXSMLJ8.0TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 3000W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXSMLJ8.5A MICROSEMI

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 		Trans Voltage Suppressor Diode, 3000W, 8.5V V(RWM), Unidirectional, 1 Element, Silicon, DO
MXSMLJ8.5A/TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 3000W, 8.5V V(RWM), Unidirectional, 1 Element, Silicon, DO

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