是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | R-PDSO-C2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.45 | 最大击穿电压: | 22.1 V |
最小击穿电压: | 20 V | 击穿电压标称值: | 21.05 V |
最大钳位电压: | 29.2 V | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
JEDEC-95代码: | DO-214AB | JESD-30 代码: | R-PDSO-C2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
最大非重复峰值反向功率耗散: | 3000 W | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性: | BIDIRECTIONAL |
最大功率耗散: | 1.61 W | 认证状态: | Not Qualified |
参考标准: | MIL-19500 | 最大重复峰值反向电压: | 18 V |
子类别: | Transient Suppressors | 表面贴装: | YES |
技术: | AVALANCHE | 端子面层: | Matte Tin (Sn) |
端子形式: | C BEND | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MXSMLJ18CAE3TR | MICROSEMI |
获取价格 |
3000W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, PLASTIC PACKAGE-2 | |
MXSMLJ18CATR | MICROSEMI |
获取价格 |
3000W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, PLASTIC PACKAGE-2 | |
MXSMLJ18CATRE3 | MICROSEMI |
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Trans Voltage Suppressor Diode, 3000W, 18V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 | |
MXSMLJ20A | MICROSEMI |
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Trans Voltage Suppressor Diode, 3000W, 20V V(RWM), Unidirectional, 1 Element, Silicon, DO- | |
MXSMLJ20A/TR | MICROSEMI |
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Trans Voltage Suppressor Diode, 3000W, 20V V(RWM), Unidirectional, 1 Element, Silicon, DO- | |
MXSMLJ20AE3 | MICROSEMI |
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Trans Voltage Suppressor Diode, 3000W, 20V V(RWM), Unidirectional, 1 Element, Silicon, DO- | |
MXSMLJ20AE3TR | MICROSEMI |
获取价格 |
3000W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, PLASTIC PACKAGE-2 | |
MXSMLJ20ATRE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 3000W, 20V V(RWM), Unidirectional, 1 Element, Silicon, DO- | |
MXSMLJ20CA/TR | MICROSEMI |
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Trans Voltage Suppressor Diode, 3000W, 20V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 | |
MXSMLJ20CAE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 3000W, 20V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 |