Datasheet > MXSMLJ100AE3/TR

MXSMLJ100AE3/TR

更新时间： 2024-11-03 20:41:19

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网光电二极管
页数	文件大小	规格书
4页	175K
描述
Trans Voltage Suppressor Diode, 3000W, 100V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, PLASTIC PACKAGE-2

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MXSMLJ100AE3/TR 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	R-PDSO-C2	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.53	最大击穿电压：	123 V
最小击穿电压：	111 V	击穿电压标称值：	117 V
最大钳位电压：	162 V	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：	DO-214AB	JESD-30 代码：	R-PDSO-C2
JESD-609代码：	e3	湿度敏感等级：	1
最大非重复峰值反向功率耗散：	3000 W	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性：	UNIDIRECTIONAL
最大功率耗散：	1.61 W	认证状态：	Not Qualified
参考标准：	MIL-19500	最大重复峰值反向电压：	100 V
子类别：	Transient Suppressors	表面贴装：	YES
技术：	AVALANCHE	端子面层：	Matte Tin (Sn)
端子形式：	C BEND	端子位置：	DUAL
处于峰值回流温度下的最长时间：	40	Base Number Matches：	1

MXSMLJ100AE3/TR 数据手册

TECHNICAL DATA SHEET

Gort Road Business Park, Ennis, Co. Clare, Ireland.

Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298

6 Lake Street, Lawrence, MA 01841

Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803

Website: http://www.microsemi.com

- High Reliability controlled devices

SURFACE MOUNT 3000 Watt

Transient Voltage Suppressor

- Unidirectional (A) and Bidirectional (CA) construction

- Available in both J-bend and Gull-wing terminations

- Selections for 5.0 to 170 V standoff voltages (V^WM

)

LEVELS

M, MA, MX, MXL

DEVICES

MSMLJ5.0A thru MSMLJ170CA, e3

and MSMLG5.0A thru MSMLG170CA, e3

FEATURES

High reliability controlled devices with wafer fabrication and assembly lot traceability

100 % surge tested devices

Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes specify

various screening and conformance inspection options based on MIL-PRF-19500. Refer to MicroNote 129

for more details on the screening options.

Axial-lead equivalent packages for thru-hole mounting available as M5KP5.0A to M5KP110CA with 5000 W

rating, (consult factory for other surface mount options)

Refer to table below

for dimensions

Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B

RoHS compliant devices available by adding an “e3” suffix

3σ lot norm screening performed on Standby Current I_D

APPLICATIONS / BENEFITS

Suppresses transients up to 3000 watts @ 10/1000 µs

Protection from switching transients and induced RF

Protection from ESD, and EFT per IEC 61000-4-2 and IEC 61000-4-4

Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:

Class 1 & 2: MSML5.0A to MSML 170ACA

Class 3: MSML5.0A to MSML150CA

Class 4: MSML5.0A to MSML75CA

Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance:

Class 1: MSML5.0A to MSML170CA

Class 2: MSML5.0A to MSML90CA

Class 3: MSML5.0A to MSML48CA

Class 4: MSML5.0A to MSML24CA

Secondary lightning protection per IEC61000-4-5 with 2 Ohms source impedance:

Class 2: MSML5.0A to MSML43CA

Class 3: MSML5.0A to MSML22CA

Class 4: MSML5.0A to MSML10CA

MAXIMUM RATINGS

Peak Pulse Power dissipation at 25 ºC: 3000 watts at 10/1000 μs (also see Figures 1,2, and 3) with

impulse repetition rate (duty factor) of 0.01 % or less

(0 V to V_BRmin.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional

clamping

Operating and Storage temperature: -65 ºC to +150 ºC

Thermal resistance: 17.5 ºC/W junction to lead, or 77.5 ºC/W junction to ambient when mounted on FR4

PC board (1 oz Cu) with recommended footprint Steady-State Power dissipation: 6 watts at TL = 45 ºC, or

1.61 watts at TA = 25 ºC when mounted on FR4 PC board with recommended footprint (see page 2)

Forward Surge at 25 ºC: 200 Amps peak impulse of 8.3 ms half-sine wave (unidirectional only)

Solder temperatures: 260 ºC for 10 s (maximum)

RF01003 Rev B, Sept 2011

High Reliability Product Group

Page 1 of 4

12 3 4

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与MXSMLJ100AE3/TR相关器件

型号	品牌	获取价格	描述	数据表
MXSMLJ100AE3TR	MICROSEMI	获取价格	3000W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, PLASTIC PACKAGE-2
MXSMLJ100ATR	MICROSEMI	获取价格	3000W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, PLASTIC PACKAGE-2
MXSMLJ100ATRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 3000W, 100V V(RWM), Unidirectional, 1 Element, Silicon, DO
MXSMLJ100CA/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 3000W, 100V V(RWM), Bidirectional, 1 Element, Silicon, DO-
MXSMLJ100CAE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 3000W, 100V V(RWM), Bidirectional, 1 Element, Silicon, DO-
MXSMLJ100CAE3/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 3000W, 100V V(RWM), Bidirectional, 1 Element, Silicon, DO-
MXSMLJ100CAE3TR	MICROSEMI	获取价格	3000W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, PLASTIC PACKAGE-2
MXSMLJ100CATR	MICROSEMI	获取价格	3000W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, PLASTIC PACKAGE-2
MXSMLJ10A	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 3000W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MXSMLJ10AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 3000W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-

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