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MXSMLG8.0AE3 PDF预览

MXSMLG8.0AE3

更新时间: 2024-11-04 05:23:19
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
8页 482K
描述
Trans Voltage Suppressor Diode, 3000W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-215AB, ROHS COMPLIANT, PLASTIC PACKAGE-2

MXSMLG8.0AE3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:DO-215AB
包装说明:R-PDSO-G2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.61
最大击穿电压:9.83 V最小击穿电压:8.89 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-215AB
JESD-30 代码:R-PDSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:3000 W
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大功率耗散:1.61 W
认证状态:Not Qualified参考标准:MIL-19500
最大重复峰值反向电压:8 V表面贴装:YES
技术:AVALANCHE端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40

MXSMLG8.0AE3 数据手册

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