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MXSMCGLCE10AE3 PDF预览

MXSMCGLCE10AE3

更新时间: 2024-11-04 21:05:35
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
7页 1166K
描述
Trans Voltage Suppressor Diode, 1500W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-215AB, ROHS COMPLIANT, PLASTIC PACKAGE-2

MXSMCGLCE10AE3 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:DO-215AB包装说明:R-PDSO-G2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.44最大击穿电压:12.3 V
最小击穿电压:11.1 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-215ABJESD-30 代码:R-PDSO-G2
JESD-609代码:e3最大非重复峰值反向功率耗散:1500 W
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大功率耗散:5 W
认证状态:Not Qualified参考标准:MIL-19500
最大重复峰值反向电压:10 V表面贴装:YES
技术:AVALANCHE端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

MXSMCGLCE10AE3 数据手册

 浏览型号MXSMCGLCE10AE3的Datasheet PDF文件第2页浏览型号MXSMCGLCE10AE3的Datasheet PDF文件第3页浏览型号MXSMCGLCE10AE3的Datasheet PDF文件第4页浏览型号MXSMCGLCE10AE3的Datasheet PDF文件第5页浏览型号MXSMCGLCE10AE3的Datasheet PDF文件第6页浏览型号MXSMCGLCE10AE3的Datasheet PDF文件第7页 

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