5秒后页面跳转
捷配首页

Datasheet > MXSMBJ2K3.0E3/TR
MXSMBJ2K3.0E3/TR PDF预览

MXSMBJ2K3.0E3/TR

更新时间： 2024-11-16 06:46:43
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
4页 306K
描述
Trans Voltage Suppressor Diode, 2000W, 3V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2

阅读下载

中文翻译

获取价格

MXSMBJ2K3.0E3/TR 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：R-PDSO-J2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.84其他特性：HIGH RELIABILITY
最小击穿电压：4.3 V最大钳位电压：5.4 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-214AA
JESD-30 代码：R-PDSO-J2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值反向功率耗散：2000 W
元件数量：1端子数量：2
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性：UNIDIRECTIONAL最大功率耗散：1.38 W
认证状态：Not Qualified最大重复峰值反向电压：3 V
子类别：Transient Suppressors表面贴装：YES
技术：AVALANCHE端子面层：MATTE TIN
端子形式：J BEND端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

MXSMBJ2K3.0E3/TR 数据手册

 浏览型号MXSMBJ2K3.0E3/TR的Datasheet PDF文件第2页浏览型号MXSMBJ2K3.0E3/TR的Datasheet PDF文件第3页浏览型号MXSMBJ2K3.0E3/TR的Datasheet PDF文件第4页 
TECHNICAL DATA SHEET  
Gort Road Business Park, Ennis, Co. Clare, Ireland.  
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298  
6 Lake Street, Lawrence, MA 01841  
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803  
Website: http://www.microsemi.com  
- High Reliability controlled devices  
Surface Mount 2 kW  
- Unidirectional construction  
Transient Voltage Suppressor  
- Available in both J-bend and Gull-wing terminations  
- Selections for 3 V to 5 V standoff voltages (VWM)  
LEVELS  
M, MA, MX, MXL  
DEVICES  
MSMBJ2K3.0 thru MSMBJ2K5.0, e3  
MSMBG2K3.0 thru MSMBG2K5.0,e3  
FEATURES  
.
.
.
.
High reliability controlled devices with wafer fabrication and assembly lot traceability  
100 % surge tested devices  
Suppresses transients up to 2 kW @ 8/20 µs  
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes  
specify various screening and conformance inspection options based on MIL-PRF-19500.  
Refer to MicroNote 129 for more details on the screening options.  
.
.
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B  
3σ lot norm screening performed on Standby Current ID  
APPLICATIONS / BENEFITS  
.
Voltage and reverse (leakage) current lowest available  
.
.
.
.
Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc.  
Protection from switching transients & induced RF  
Compliant to IEC61000-4-2 and IEC61000-4-4 for ESD and EFT protection respectively  
Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance for Class 1  
MAXIMUM RATINGS  
.
.
Peak Pulse Power dissipation at 25 ºC: 2000 W @ 8/20 µs or 300 W @ 10/1000 µs  
with impulse repetition rate (duty factor) of 0.01 maximum (also see Figure 1 and 4)  
Steady-state power dissipation: 5 Watts @ TL ≤ 25 °C or 1.38 Watts at TA = 25 °C when  
mounted on FR4 PC board with recommended footprint  
.
.
.
Tclamping (0 Volts to VBR min.): <100 ps  
Operating and Storage temperatures: -65°C to +150°C  
Forward Voltage @ 25 °C: 3.5 Volts maximum @ 30 Amp peak impulse of 8.3 ms half-sine  
wave (unidirectional only)  
.
Solder temperatures: 260 °C for 10 s (maximum)  
RF01019 Rev A, November 2010  
High Reliability Product Group  
Page 1 of 4  
1234

中文翻译

下载PDF

与MXSMBJ2K3.0E3/TR相关器件

型号 品牌 获取价格 描述 数据表
MXSMBJ2K3.0TR MICROSEMI

获取价格

 		2000W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC PACKAGE-2
MXSMBJ2K3.3/TR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 2000W, 3.3V V(RWM), Unidirectional, 1 Element, Silicon, DO
MXSMBJ2K3.3E3TR MICROSEMI

获取价格

 		2000W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2
MXSMBJ2K4.0E3 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 2000W, 4V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXSMBJ2K4.0E3/TR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 2000W, 4V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXSMBJ2K4.0E3TR MICROSEMI

获取价格

 		2000W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2
MXSMBJ2K4.0TR MICROSEMI

获取价格

 		2000W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC PACKAGE-2
MXSMBJ2K4.5E3 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 2000W, 4.5V V(RWM), Unidirectional, 1 Element, Silicon, DO
MXSMBJ2K4.5E3TR MICROSEMI

获取价格

 		2000W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2
MXSMBJ2K5.0 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 300W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DO-21

与MXSMBJ2K3.0E3/TR相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证