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MXSMBJ2K3.0E3/TR

更新时间： 2024-09-28 06:46:43
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
4页 306K
描述
Trans Voltage Suppressor Diode, 2000W, 3V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2

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MXSMBJ2K3.0E3/TR 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：R-PDSO-J2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.84其他特性：HIGH RELIABILITY
最小击穿电压：4.3 V最大钳位电压：5.4 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-214AA
JESD-30 代码：R-PDSO-J2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值反向功率耗散：2000 W
元件数量：1端子数量：2
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性：UNIDIRECTIONAL最大功率耗散：1.38 W
认证状态：Not Qualified最大重复峰值反向电压：3 V
子类别：Transient Suppressors表面贴装：YES
技术：AVALANCHE端子面层：MATTE TIN
端子形式：J BEND端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

MXSMBJ2K3.0E3/TR 数据手册

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TECHNICAL DATA SHEET  
Gort Road Business Park, Ennis, Co. Clare, Ireland.  
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298  
6 Lake Street, Lawrence, MA 01841  
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803  
Website: http://www.microsemi.com  
- High Reliability controlled devices  
Surface Mount 2 kW  
- Unidirectional construction  
Transient Voltage Suppressor  
- Available in both J-bend and Gull-wing terminations  
- Selections for 3 V to 5 V standoff voltages (VWM)  
LEVELS  
M, MA, MX, MXL  
DEVICES  
MSMBJ2K3.0 thru MSMBJ2K5.0, e3  
MSMBG2K3.0 thru MSMBG2K5.0,e3  
FEATURES  
.
.
.
.
High reliability controlled devices with wafer fabrication and assembly lot traceability  
100 % surge tested devices  
Suppresses transients up to 2 kW @ 8/20 µs  
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes  
specify various screening and conformance inspection options based on MIL-PRF-19500.  
Refer to MicroNote 129 for more details on the screening options.  
.
.
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B  
3σ lot norm screening performed on Standby Current ID  
APPLICATIONS / BENEFITS  
.
Voltage and reverse (leakage) current lowest available  
.
.
.
.
Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc.  
Protection from switching transients & induced RF  
Compliant to IEC61000-4-2 and IEC61000-4-4 for ESD and EFT protection respectively  
Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance for Class 1  
MAXIMUM RATINGS  
.
.
Peak Pulse Power dissipation at 25 ºC: 2000 W @ 8/20 µs or 300 W @ 10/1000 µs  
with impulse repetition rate (duty factor) of 0.01 maximum (also see Figure 1 and 4)  
Steady-state power dissipation: 5 Watts @ TL ≤ 25 °C or 1.38 Watts at TA = 25 °C when  
mounted on FR4 PC board with recommended footprint  
.
.
.
Tclamping (0 Volts to VBR min.): <100 ps  
Operating and Storage temperatures: -65°C to +150°C  
Forward Voltage @ 25 °C: 3.5 Volts maximum @ 30 Amp peak impulse of 8.3 ms half-sine  
wave (unidirectional only)  
.
Solder temperatures: 260 °C for 10 s (maximum)  
RF01019 Rev A, November 2010  
High Reliability Product Group  
Page 1 of 4  
1234

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与MXSMBJ2K3.0E3/TR相关器件

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MXSMBJ2K3.0TR MICROSEMI

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MXSMBJ2K3.3/TR MICROSEMI

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MXSMBJ2K4.0E3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 2000W, 4V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXSMBJ2K4.0E3/TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 2000W, 4V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXSMBJ2K4.0E3TR MICROSEMI

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MXSMBJ2K4.0TR MICROSEMI

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 		2000W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC PACKAGE-2
MXSMBJ2K4.5E3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 2000W, 4.5V V(RWM), Unidirectional, 1 Element, Silicon, DO
MXSMBJ2K4.5E3TR MICROSEMI

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 		2000W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2
MXSMBJ2K5.0 MICROSEMI

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 		Trans Voltage Suppressor Diode, 300W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DO-21

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