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MXSMBJ2K5.0 PDF预览

MXSMBJ2K5.0

更新时间: 2024-09-27 21:18:23
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
6页 452K
描述
Trans Voltage Suppressor Diode, 300W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA

MXSMBJ2K5.0 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete包装说明:R-PDSO-C2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.92
Is Samacsys:N最小击穿电压:5.9 V
最大钳位电压:7.6 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
最大非重复峰值反向功率耗散:300 W元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:1.38 W认证状态:Not Qualified
最大重复峰值反向电压:5 V子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MXSMBJ2K5.0 数据手册

 浏览型号MXSMBJ2K5.0的Datasheet PDF文件第2页浏览型号MXSMBJ2K5.0的Datasheet PDF文件第3页浏览型号MXSMBJ2K5.0的Datasheet PDF文件第4页浏览型号MXSMBJ2K5.0的Datasheet PDF文件第5页浏览型号MXSMBJ2K5.0的Datasheet PDF文件第6页 

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